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TOREX XP152A11E5MR-G
| Manufacturer | |
| MPN | XP152A11E5MR-G |
| LCSC Part # | C6616834 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 0.7A SOT-23 |
| Datasheet | TOREX XP152A11E5MR-G |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOREX | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 160pF | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOREX | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 160pF | |
| Type | P-Channel |
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Introduction
AI Translation
The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Features
AI Translation
- Low On-State Resistance: Rds(On) = 0.25Ω @ Vgs = -10V; Rds(On) = 0.45Ω @ Vgs = -4.5V
- Ultra High-Speed Switching
- Gate Protect Diode Built-in
- Driving Voltage: -4.5V
- P-Channel Power MOSFET
- DMOS Structure
- Small Package: SOT-23
- Environmentally Friendly: EU RoHS Compliant, Pb Free
Applications
AI Translation
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
In-Stock: 4
4 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3702 | $ 0.37 |
| 10+ | $ 0.3622 | $ 3.62 |
| 30+ | $ 0.3574 | $ 10.72 |
| 100+ | $ 0.351 | $ 35.10 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOREX | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 160pF | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOREX | |
| Packaging | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 700mA | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 250mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 160pF | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Features
AI Translation
- Low On-State Resistance: Rds(On) = 0.25Ω @ Vgs = -10V; Rds(On) = 0.45Ω @ Vgs = -4.5V
- Ultra High-Speed Switching
- Gate Protect Diode Built-in
- Driving Voltage: -4.5V
- P-Channel Power MOSFET
- DMOS Structure
- Small Package: SOT-23
- Environmentally Friendly: EU RoHS Compliant, Pb Free
Applications
AI Translation
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDN352AP | onsemi | SOT-23 | 1,405 | $ 0.1536 | ||
| BSS314PEH6327 | Infineon | SOT-23 | 1,180 | $ 0.1813 | ||
| BSS315PH6327XTSA1 | Infineon | SOT-23 | 1,005 | $ 0.192 | ||
| FDN5618P | onsemi | SOT-23-3 | 42,585 | $ 0.1575 | ||
| NDS352AP | onsemi | SOT-23-3 | 3,285 | $ 0.3004 | ||
| FDN352AP(UMW) | UMW | SOT-23 | 10,090 | $ 0.0511 | ||
| NDS356AP | onsemi | SOT-23 | 17 | $ 1.1514 | ||
| FDN358P(UMW) | UMW | SOT-23 | 5,740 | $ 0.0461 | ||
| FDN360P | onsemi | SOT-23 | 3,540 | $ 0.2105 | ||
| DMP3030SN-7 | DIODES | SC-59 | 0 | $ 0.4586 |