Qorvo UJ3C065030T3S
| Producent | |
| Nr części prod. | UJ3C065030T3S |
| Nr LCSC | C6582084 |
| Opak. | TO-220-3 |
| Numer Klienta | |
| Klucz. cechy | 650V 85A 441W N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  Qorvo UJ3C065030T3S |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 85A | |
| Pd - Power Dissipation | 441W | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | TO-220-3 | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 85A | |
| Pd - Power Dissipation | 441W | |
| Type | N-Channel |
Opis
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. Its standard gate drive characteristics enable true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-220-3L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Funkcje
- Typical on-resistance R<sub>DS(on)</sub>,typ: 27mΩ
- Maximum operating temperature: 175°C
- Excellent reverse recovery performance
- Low gate charge
- Low intrinsic capacitance
- ESD protection, HBM Class 2
Zastosowania
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 42.8624 | $ 42.86 |
| 200+ | $ 17.1033 | $ 3420.66 |
| 500+ | $ 16.5315 | $ 8265.75 |
| 1,000+ | $ 16.2495 | $ 16249.50 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | TO-220-3 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 85A | |
| Pd - Power Dissipation | 441W | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Qorvo | |
| Opak. | TO-220-3 | |
| Drain to Source Voltage | 650V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 85A | |
| Pd - Power Dissipation | 441W | |
| Type | N-Channel |
Opis
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to form a normally-off SiC FET device. Its standard gate drive characteristics enable true drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO-220-3L package, the device features ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Funkcje
- Typical on-resistance R<sub>DS(on)</sub>,typ: 27mΩ
- Maximum operating temperature: 175°C
- Excellent reverse recovery performance
- Low gate charge
- Low intrinsic capacitance
- ESD protection, HBM Class 2
Zastosowania
- Electric vehicle charging
- Photovoltaic inverters
- Switched-mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |