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PANJIT PJQ4444P-AU_R2_000A1
| Manufacturer | PANJITAsian Brands |
| MPN | PJQ4444P-AU_R2_000A1 |
| LCSC Part # | C6357536 |
| Packaging | DFN3333-8 |
| Customer # | |
| Key Attributes | 40V 2.5V 5.5mΩ@10V 1 N-channel DFN3333-8 Single FETs, MOSFETs RoHS |
| Datasheet | PANJIT PJQ4444P-AU_R2_000A1 |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | DFN3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14A;70A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.4W;60W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.258nF | |
| Gate Charge(Qg) | 25nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | DFN3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14A;70A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.4W;60W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.258nF | |
| Gate Charge(Qg) | 25nC@4.5V |
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Features
AI Translation
- RDS(ON) < 5.5 mΩ at VGS = 10 V, ID = 20 A
- RDS(ON) < 7.5 mΩ at VGS = 4.5 V, ID = 10 A
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
- AEC-Q101 qualified
- Lead-free, RoHS 2.0 compliant
- Green molding compound compliant with IEC 61249
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3002 | $ 0.30 |
| 200+ | $ 0.1198 | $ 23.96 |
| 500+ | $ 0.1158 | $ 57.90 |
| 1,000+ | $ 0.1138 | $ 113.80 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | DFN3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14A;70A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.4W;60W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.258nF | |
| Gate Charge(Qg) | 25nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | PANJIT | |
| Packaging | DFN3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 14A;70A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2.4W;60W | |
| RDS(on) | 5.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.258nF | |
| Gate Charge(Qg) | 25nC@4.5V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- RDS(ON) < 5.5 mΩ at VGS = 10 V, ID = 20 A
- RDS(ON) < 7.5 mΩ at VGS = 4.5 V, ID = 10 A
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
- AEC-Q101 qualified
- Lead-free, RoHS 2.0 compliant
- Green molding compound compliant with IEC 61249
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PJQ4444P_R2_00001 | PANJIT | DFN3333-8 | 0 | $ 0.2143 |