MICROCHIP VN2460N3-G-P003
| Manufacturer | |
| MPN | VN2460N3-G-P003 |
| LCSC Part # | C629226 |
| Packaging | TO-92-3 |
| Customer # | |
| Key Attributes | 600V 160mA 4V 1W 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP VN2460N3-G-P003 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 160mA | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 150pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 160mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 150pF |
Introduction
The VN2460 enhancement-mode (normally-off) transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure combined with a well-established silicon-gate fabrication process. This combination provides the device with the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low power drive requirements
- Easy to parallel
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applications
- Motor Control - Converters, Amplifiers & Switches - Power Supply Circuits - Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.3367 | $ 1.34 |
| 200+ | $ 0.5171 | $ 103.42 |
| 500+ | $ 0.5001 | $ 250.05 |
| 1,000+ | $ 0.4909 | $ 490.90 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 160mA | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 150pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 160mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 150pF |
Introduction
The VN2460 enhancement-mode (normally-off) transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure combined with a well-established silicon-gate fabrication process. This combination provides the device with the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low power drive requirements
- Easy to parallel
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applications
- Motor Control - Converters, Amplifiers & Switches - Power Supply Circuits - Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STQ1HNK60R-AP | ST | TO-92 | 40 | $ 0.6538 | ||
| 2N70 | XCH | TO-92 | 970 | $ 0.1476 | ||
| STQ2LN60K3-AP | ST | TO-92-3 | 53 | $ 0.4582 | ||
| STQ1NK80ZR-AP | ST | TO-92-3 | 3 | $ 0.4468 | ||
| VN2460N3-G-P014 | MICROCHIP | TO-92-3 | 0 | $ 1.3367 | ||
| 1N60L-T92-K | UTC | TO-92 | 0 | $ 0.1253 | ||
| 1N60L-T92-B | UTC | TO-92 | 0 | $ 0.1048 | ||
| 1N65 | YFW | TO-92 | 0 | $0.0998 $0.105 | ||
| JCS1N70TC-92 | Jilin Sino-Microelectronics | TO-92-3 | 0 | $ 0.0846 | ||
| CS1N60A1H | Wuxi China Resources Huajing Microelectronics | TO-92 | 0 | $ 0.1322 |