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MICROCHIP VP2110K1-G
| Manufacturer | |
| MPN | VP2110K1-G |
| LCSC Part # | C626717 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | 100V 500mA 3.5V 360mW 12Ω@10V 1 P-Channel SOT-23-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP VP2110K1-G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 12Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 60pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 500mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 12Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 60pF |
Introduction
The VP2110 enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure combined with a well-established silicon-gate fabrication process. This combination yields a device that integrates the power-handling capability of bipolar transistors with the high input impedance and positive temperature coefficient characteristics of MOS devices. As is inherent to all MOS structures, these devices are immune to thermal runaway and thermally induced second breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low gate drive power requirements
- Easy to parallel
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applications
- Motor Control
- Converters
- Amplifiers
- Switches
- Power Circuits
- Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.831 | $ 1.83 |
| 10+ | $ 1.6052 | $ 16.05 |
| 30+ | $ 1.4817 | $ 44.45 |
| 100+ | $ 1.342 | $ 134.20 |
| 500+ | $ 1.2738 | $ 636.90 |
| 1,000+ | $ 1.2461 | $ 1246.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 500mA | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 12Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 60pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 500mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 360mW | |
| RDS(on) | 12Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 60pF |
Introduction
The VP2110 enhancement-mode (normally-off) transistor employs a vertical double-diffused metal-oxide-semiconductor (DMOS) structure combined with a well-established silicon-gate fabrication process. This combination yields a device that integrates the power-handling capability of bipolar transistors with the high input impedance and positive temperature coefficient characteristics of MOS devices. As is inherent to all MOS structures, these devices are immune to thermal runaway and thermally induced second breakdown.
Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low gate drive power requirements
- Easy to parallel
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated source-drain diode
- High input impedance and high gain
Applications
- Motor Control
- Converters
- Amplifiers
- Switches
- Power Circuits
- Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)
C626717 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SQ2325ES-T1_GE3 | VISHAY | SOT-23 | 2,177 | $ 0.656 | ||
| FDN86265P | onsemi | SOT-23-3 | 3,000 | $ 0.9495 | ||
| SI2325DS | TECH PUBLIC | SOT-23 | 3,050 | $ 0.2255 | ||
| UF07P15G | TECH PUBLIC | SOT-23 | 1,245 | $ 0.245 | ||
| FDN86265P-TP | TECH PUBLIC | SOT-23 | 1,045 | $ 0.3015 | ||
| HSS1P25 | HUASHUO | SOT-23L | 5,390 | $ 0.2769 | ||
| 1P15L | HL | SOT-23-3L | 2,270 | $ 0.1017 | ||
| PMV240SPR-VB | VBsemi Elec | SOT-23 | 125 | $0.2134 $0.2246 | ||
| TP5322K1-G | MICROCHIP | SOT-23-3 | 0 | $ 2.2471 | ||
| ZXMP10A13FQTA | DIODES | SOT-23 | 0 | $ 0.3136 |