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MICROCHIP TC2320TG-G
| Manufacturer | |
| MPN | TC2320TG-G |
| LCSC Part # | C624902 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 200V 1.2A SOIC-8 |
| Datasheet | MICROCHIP TC2320TG-G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF;85pF | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 1.2A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF;35pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF;85pF | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 1.2A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 7Ω@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF;35pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V |
Introduction
The TC2320 consists of a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This Enhancement-mode (normally-off) transistor uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- Low Threshold
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speeds
- Free from Secondary Breakdown
- Low Input and Output Leakage
- Independent, Electrically Isolated N-Channel and P-Channel
Applications
- Medical Ultrasound Transmitters
- High-Voltage Pulsers
- Amplifiers
- Buffers
- Piezoelectric Transducer Drivers
- General Purpose Line Drivers
- Logic-Level Interface
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.454 | $ 3.45 |
| 10+ | $ 3.3923 | $ 33.92 |
| 30+ | $ 3.35 | $ 100.50 |
| 100+ | $ 3.2883 | $ 328.83 |
Standard Packaging3300/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF;85pF | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 1.2A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF;35pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | MICROCHIP | |
| Packaging | SOIC-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 60pF;85pF | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 1.2A | |
| Pd - Power Dissipation | - | |
| RDS(on) | 7Ω@10V |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 600mV | |
| Type | N-Channel + P-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF;35pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 110pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V |
Introduction
The TC2320 consists of a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This Enhancement-mode (normally-off) transistor uses an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- Low Threshold
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speeds
- Free from Secondary Breakdown
- Low Input and Output Leakage
- Independent, Electrically Isolated N-Channel and P-Channel
Applications
- Medical Ultrasound Transmitters
- High-Voltage Pulsers
- Amplifiers
- Buffers
- Piezoelectric Transducer Drivers
- General Purpose Line Drivers
- Logic-Level Interface
C624902 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TC6320TG-G | MICROCHIP | SOIC-8 | 1,266 | $ 3.1291 | ||
| FTE03R20D | ARK micro | SOP-8 | 55 | $2.5811 $2.7169 | ||
| FQS4900TF | onsemi | SOP-8 | 0 | $ 0.7394 |