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MICROCHIP SST26VF016BT-104V/SN product image
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MICROCHIP SST26VF016BT-104V/SNRoHS

Manufacturer
MPN
SST26VF016BT-104V/SN
LCSC Part #
C624767
Packaging
SOIC-8
Customer #
Key Attributes
16Mbit 2.3V~3.6V 104MHz SPI SOIC-8 Memory RoHS
Datasheetpdf iconMICROCHIP SST26VF016BT-104V/SN
In-Stock: 3
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QtyUnit PriceTotal Amount
1+$ 3.6242$ 3.62
10+$ 3.5363$ 35.36
30+$ 3.4778$ 104.33
100+$ 3.4192$ 341.92
Standard Packaging3300/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingSOIC-8
Operating Temperature-40℃~+105℃
FeaturesWrite enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection
Memory Size16Mbit
Voltage - Supply2.3V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency104MHz
Data Retention - TDR (Year)100 Years
Block Erase Time(tBE)25ms
Write Cycle Time(tWC)-
Page Programming Time (Tpp)1.5ms
Standby Supply Current15uA
InterfaceSPI

Introduction

AI Translation

The Serial Quad 1/0TM (SQI™) family of Flash memory devices features a six-wire, 4-bit |!/○ interface that allows for low-power, high-performance operation in a low pin-count package. SST26VF016B also supports full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI Flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series SQI family are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. SST26VF016B significantly improves performance and reliability, while lowering power consumption. These devices write (Program or Erase) with a single power supply of 2.3V - 3.6V. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative Flash memory technologies.

Features

AI Translation
  • Single Voltage Read and Write Operations: - 2.7V - 3.6V or 2.3V - 3.6V
  • Serial Interface Architecture: - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3 - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
  • High-Speed Clock Frequency: - 2.7V - 3.6V: 104 MHz maximum - 2.3V - 3.6V: 80 MHz maximum
  • Burst Modes: - Continuous linear burst - 8/16/32/64-byte linear burst with wrap-around
  • Superior Reliability: - Endurance: 100,000 Cycles (minimum) - Greater than 100 years data retention
  • Low-Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 15 µA (typical)
  • Fast Erase Time: - Sector/Block Erase: 18 ms (typical), 25 ms (maximum) - Chip Erase: 35 ms (typical), 50 ms (maximum)
  • Page Program: - 256 bytes per page in x1 or x4 mode
  • End-of-Write Detection: - Software polling the BUSY bit in STATUS register
  • Flexible Erase Capability: - Uniform 4-Kbyte sectors - Four 8-Kbyte top and bottom parameter overlay blocks - One 32-Kbyte top and bottom overlay blocks - Uniform 64-Kbyte overlay blocks
  • Write Suspend: - Suspend Program or Erase operation to access another block/sector
  • Software Reset (RST) mode
  • Software Write Protection: - Individual Block Write Protection with permanent lock-down capability - 64-Kbyte blocks, two 32-Kbyte blocks and eight 8-Kbyte parameter blocks
  • Read Protection on top and bottom 8-Kbyte parameter blocks
  • Security ID: - One-Time-Programmable (OTP) 2-Kbyte, Secure ID - 64-bit unique, factory pre-programmed identifier - User-programmable area
  • Temperature Range: - Industrial: -40℃ to +85℃ - Industrial Plus: -40℃ to +105℃ - Extended: -40℃ to +125℃
  • Automotive AEC-Q100 Qualified
  • All devices are RoHS compliant