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MICROCHIP MCP6N16T-010E/MF

Manufacturer
MPN
MCP6N16T-010E/MF
LCSC Part #
C623797
Packaging
DFN-8(3x3)
Customer #
Key Attributes
Single-channel 22uV 2pA DFN-8(3x3) Instrumentation, Op Amps, Buffer Amps RoHS
DatasheetMICROCHIP MCP6N16T-010E/MF
RoHS Compliance2 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerMICROCHIP
PackagingDFN-8(3x3)
output type-
Gain Error0.15%
Number of ChannelsSingle-channel
FeaturesExternal resistor gain;Zero drift / auto-zero;Enable/shutdown function;EMI filtering/RF suppression
Vos - Input Offset Voltage22uV
Slew Rate-
Operating Temperature-40℃~+125℃
Ib - Input Bias Current2pA
Rail to Rail-
-3dB Bandwidth500kHz

Introduction

AI Translation

The internal offset correction gives high DC precision: it has very low offset and offset drift, and negligible 1/f noise. Two external resistors set the gain, minimizing gain error and drift over temperature. The reference voltage (V_REF) shifts the output voltage (V_OUT). The MCP6N16 is designed for single-supply operation, with rail-to-rail input (no common mode crossover distortion) and output performance. The supply voltage range (1.8V to 5.5V) is low enough to support many portable applications. All devices are fully specified from -40℃ to +125℃. Each part has EMI filters at the input pins, for good EMI rejection (EMIRR). These parts have three minimum gain options (1, 10 and 100 V/V). This allows the user to optimize the input offset voltage and input noise for different applications.

Features

AI Translation
  • High DC Precision:
    • V_OS: ±17 μV (maximum, G_MIN = 100)
    • TC_VOS: ±60 nV/℃ (maximum, G_MIN = 100)
    • CMRR: 112 dB (minimum, G_MIN = 100, V_DD = 5.5V)
    • PSRR: 110 dB (minimum, G_MIN = 100, V_DD = 5.5V)
    • gE: ±0.15% (maximum, G_MIN = 10, 100)
  • Flexible:
    • Minimum Gain (G_MIN) Options: 1, 10 and 100 V/V
    • Rail-to-Rail Input and Output
    • Gain Set by Two External Resistors
  • Bandwidth: 500 kHz (typical, Gain = G_MIN = 1, 10)
  • Power Supply:
    • V_DD: 1.8V to 5.5V
    • IQ: 1.1 mA (typical)
    • Power Savings (Enable) Pin: EN
  • Enhanced EMI Protection:
    • Electromagnetic Interference Rejection Ratio (EMIRR): 111 dB at 2.4 GHz
  • Extended Temperature Range: -40℃ to +125℃

Applications

AI Translation
  • High-Side Current Sensor
  • Wheatstone Bridge Sensors
  • Difference Amplifier with Level Shifting
  • Power Control Loops