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MICROCHIP 25LC080DT-E/MNY

Manufacturer
MPN
25LC080DT-E/MNY
LCSC Part #
C616531
Packaging
TDFN-8-EP(2x3)
Customer #
Key Attributes
8Kbit 5MHz SPI TDFN-8-EP(2x3) Memory RoHS
DatasheetMICROCHIP 25LC080DT-E/MNY
RoHS Compliance1 documents available
Alternative Parts4
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.6044$ 1.60
10+$ 1.5668$ 15.67
30+$ 1.5422$ 46.27
100+$ 1.5176$ 151.76
Standard Packaging3300/Full Reel
Better price for more quantity?
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerMICROCHIP
PackagingTDFN-8-EP(2x3)
Operating Temperature-40℃~+150℃
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Memory Size8Kbit
Voltage - Supply2.5V~5.5V;5mA
Clock Frequency5MHz
Access Time100ns
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)6ms
Standby Supply Current10uA
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Introduction

AI Translation

Mid-density 8- through 256-Kbit Serial Electrically Erasable PROMs (EEPROM). The devices are organized in blocks of x8-bit memory and support the Serial Peripheral Interface (SPI) compatible serial bus architecture. Byte-level and page-level functions are supported. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.

Features

AI Translation
  • Maximum Clock: 5 MHz
  • Low-Power CMOS Technology:
    • Write current: 5 mA at 5.5V (maximum)
    • Read current: 5 mA at 5.5V, 5 MHz
    • Standby current: 10 μA at 5.5V
  • 1,024x8 through 32,768x8 -bit Organization
  • Byte and Page-Level Write Operations
  • Self-Timed Erase and Write Cycles (6 ms maximum)
  • Block Write Protection:
    • Protect none, 1/4, 1/2 or all of array
  • Built-in Write Protection:
    • Power-on/off data protection circuitry
    • Write enable latch
    • Write-protect pin
  • Sequential Read
  • High Reliability:
    • Endurance: >1,000,000 erase/write cycles
    • Data retention: >200 years
    • ESD protection: >4000 V
  • Temperature Range Supported:
    • Extended (H): -40℃ to +150℃
  • RoHS Compliant
  • Automotive AEC-Q100 Qualified

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
25LC080DT-I/MNYMICROCHIPTDFN-8-EP(2x3)0$ 0.7436
25LC080CT-I/MNYMICROCHIPTDFN-8-EP(2x3)0$ 0.7436
25LC080CT-E/MNYMICROCHIPTDFN-8-EP(2x3)0$ 0.8403
M95080-DRMF3TG/KSTMLP-8(2x3)0$ 0.5511