Littelfuse/IXYS CPC3708ZTR
| Manufacturer | |
| MPN | CPC3708ZTR |
| LCSC Part # | C6145572 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | 2.5W 350V 14Ω@350mV 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS |
| Datasheet | Littelfuse/IXYS CPC3708ZTR |
| RoHS Compliance | 1 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 350V | |
| Operating Temperature | -40℃~+110℃ | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 14Ω@350mV | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 350V | |
| Operating Temperature | -40℃~+110℃ | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 14Ω@350mV | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CPC3708 is an N-channel depletion-mode FET available in two package options: SOT-223 (CPC3708Z) and SOT-89 (CPC3708C). Both utilize a proprietary third-generation vertical DMOS process, which delivers high-voltage MOSFET performance in a cost-effective silicon-gate process. The vertical DMOS process provides high device reliability, making it especially suitable for demanding applications in telecommunications, security, and power supply. The CPC3708Z and CPC3708C feature a typical on-resistance of 8Ω and a drain-source voltage rating of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
Features
- 350V drain-source voltage
- Depletion-mode device with low RDS(on) at low temperatures
- Low on-resistance: 8Ω (typical) at 25°C
- Low VGS(off) voltage
- High input impedance
- Low input and output leakage current
- Compact package: SOT-89 and SOT-223
- PCB space and cost savings
Applications
- LED Driver Circuit - Telecom - Normally Open Switch - Ignition Module - Converter - Security - Power Supply - Voltage Regulator
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.8956 | $ 0.90 |
| 200+ | $ 0.3577 | $ 71.54 |
| 500+ | $ 0.3455 | $ 172.75 |
| 1,000+ | $ 0.3395 | $ 339.50 |
Standard Packaging1000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 350V | |
| Operating Temperature | -40℃~+110℃ | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 14Ω@350mV | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | SOT-223 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Drain to Source Voltage | 350V | |
| Operating Temperature | -40℃~+110℃ | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 14Ω@350mV | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 300pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CPC3708 is an N-channel depletion-mode FET available in two package options: SOT-223 (CPC3708Z) and SOT-89 (CPC3708C). Both utilize a proprietary third-generation vertical DMOS process, which delivers high-voltage MOSFET performance in a cost-effective silicon-gate process. The vertical DMOS process provides high device reliability, making it especially suitable for demanding applications in telecommunications, security, and power supply. The CPC3708Z and CPC3708C feature a typical on-resistance of 8Ω and a drain-source voltage rating of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
Features
- 350V drain-source voltage
- Depletion-mode device with low RDS(on) at low temperatures
- Low on-resistance: 8Ω (typical) at 25°C
- Low VGS(off) voltage
- High input impedance
- Low input and output leakage current
- Compact package: SOT-89 and SOT-223
- PCB space and cost savings
Applications
- LED Driver Circuit - Telecom - Normally Open Switch - Ignition Module - Converter - Security - Power Supply - Voltage Regulator
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |