Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 250uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 400V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 16 | |
| Pd - Power Dissipation | 80W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 250uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 400V | |
| Emitter-Base Voltage VEBO | - |
| Type | Description | |
|---|---|---|
| DC Current Gain | 16 | |
| Pd - Power Dissipation | 80W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is manufactured using high-voltage multi-epitaxial planar technology to achieve high switching speed and medium voltage capability; features a cellular emitter structure and planar edge termination to enhance switching speed while maintaining a wide RBSOA; available in TO-220 package.
Features
AI Translation
- NPN transistor
- High voltage capability
- Low dynamic parameter spread
- Low batch-to-batch variation for reliable operation
- Very high switching speed
- Fully characterized at 125℃
Applications
AI Translation
- Fluorescent lamp electronic ballasts
- PFC solution in HF ballast half-bridge voltage-fed topology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 250uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 400V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 16 | |
| Pd - Power Dissipation | 80W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 250uA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 400V | |
| Emitter-Base Voltage VEBO | - |
| Type | Description | |
|---|---|---|
| DC Current Gain | 16 | |
| Pd - Power Dissipation | 80W | |
| Current - Collector(Ic) | 5A | |
| Configuration | - | |
| Number | - | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 800mV |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is manufactured using high-voltage multi-epitaxial planar technology to achieve high switching speed and medium voltage capability; features a cellular emitter structure and planar edge termination to enhance switching speed while maintaining a wide RBSOA; available in TO-220 package.
Features
AI Translation
- NPN transistor
- High voltage capability
- Low dynamic parameter spread
- Low batch-to-batch variation for reliable operation
- Very high switching speed
- Fully characterized at 125℃
Applications
AI Translation
- Fluorescent lamp electronic ballasts
- PFC solution in HF ballast half-bridge voltage-fed topology
C6136033 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

