MICROCHIP APT56F50B2
| Manufacturer | |
| MPN | APT56F50B2 |
| LCSC Part # | C6124813 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 500V 56A 5V 780W 100mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP APT56F50B2 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 780W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 56A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 780W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
Introduction
Power MOS 8 is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other circuits. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Features
- Fast switching with low EMI
- Low trr for high reliability
- Ultra-low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- ZVS phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 28.5846 | $ 28.58 |
| 200+ | $ 11.4057 | $ 2281.14 |
| 500+ | $ 11.0238 | $ 5511.90 |
| 1,000+ | $ 10.8359 | $ 10835.90 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 56A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 780W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 56A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 780W | |
| RDS(on) | 100mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 8.8nF | |
| Gate Charge(Qg) | 220nC@10V |
Introduction
Power MOS 8 is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other circuits. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, enabling low EMI and reliable paralleling even at very high switching frequencies.
Features
- Fast switching with low EMI
- Low trr for high reliability
- Ultra-low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- ZVS phase-shifted and other full-bridge circuits
- Half-bridge circuits
- Power Factor Correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXFH60N65X2W | Littelfuse/IXYS | TO-247 | 93 | $ 8.4942 | ||
| STW78N65M5 | ST | TO-247 | 3 | $ 32.9409 | ||
| APT56M50B2 | MICROCHIP | TO-247-3 | 0 | $ 30.0393 | ||
| IXFH78N60X3 | Littelfuse/IXYS | TO-247 | 0 | $ 9.8566 | ||
| IXFX64N50P | Littelfuse/IXYS | TO-247-3 | 0 | $ 14.7971 | ||
| R6076KNZ4C13 | ROHM | TO-247 | 0 | $ 11.3591 | ||
| R6576KNZ4C13 | ROHM | TO-247G | 0 | $ 5.0024 | ||
| APL502B2G | MICROCHIP | TO-247-3 | 0 | $ 118.369 | ||
| IXFH70N65X3 | Littelfuse/IXYS | TO-247 | 0 | $ 19.2941 | ||
| SIHG026N60EF-GE3 | VISHAY | TO-247AC | 0 | $ 11.81 |