MICROCHIP 1N6911UTK2AS/TR
| Manufacturer | |
| MPN | 1N6911UTK2AS/TR |
| LCSC Part # | C6074169 |
| Packaging | - |
| Customer # | |
| Key Attributes | 30V 540mV@25A 25A Single Diodes |
| Datasheet | MICROCHIP 1N6911UTK2AS/TR |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 540mV@25A | |
| Reverse Leakage Current (Ir) | 1.2mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 400A | |
| Current - Rectified | 25A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 540mV@25A | |
| Reverse Leakage Current (Ir) | 1.2mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 400A | |
| Current - Rectified | 25A |
Introduction
This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.85 - 0.95°C/W). The 1N6910UTK2AS through 1N6912UTK2AS devices feature anode-to-tab polarity (standard), with cathode-to-tab polarity also available as 1N6910UTK2CS through 1N6912UTK2CS. The component is also orderable in a tabless version. Upscreening services for high-reliability applications are available as well. Microsemi offers a wide range of additional products to address voltage regulation applications at both higher and lower power levels.
Features
- JEDEC registered 1N6910 - 1N6912 series.
- Oxide passivated junction construction.
- Guard ring protected for enhanced reverse energy capability.
- Epitaxial construction for minimum forward voltage drop.
- Hermetically sealed, low-profile ceramic SMT power package.
- Available as JAN, JANTX, and JANTXV per MIL-PRF-19500/723 (see part nomenclature for all available options).
- RoHS compliant versions available (commercial grade only).
Applications
- Low package inductance.
- Ultra-low thermal resistance.
- Leadless versions available for special requirements, such as 1N6910UTK2, 1N6911UTK2, and 1N6912UTK2.
- Robust ceramic and metal construction, no wire bonding.
- High surge capability with dual-sided heat dissipation.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 258.5637 | $ 258.56 |
| 200+ | $ 242.8428 | $ 48568.56 |
| 500+ | $ 234.7288 | $ 117364.40 |
| 1,000+ | $ 230.7184 | $ 230718.40 |
Standard Packaging100/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 540mV@25A | |
| Reverse Leakage Current (Ir) | 1.2mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 400A | |
| Current - Rectified | 25A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Diode Configuration | - | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 540mV@25A | |
| Reverse Leakage Current (Ir) | 1.2mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 400A | |
| Current - Rectified | 25A |
Introduction
This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.85 - 0.95°C/W). The 1N6910UTK2AS through 1N6912UTK2AS devices feature anode-to-tab polarity (standard), with cathode-to-tab polarity also available as 1N6910UTK2CS through 1N6912UTK2CS. The component is also orderable in a tabless version. Upscreening services for high-reliability applications are available as well. Microsemi offers a wide range of additional products to address voltage regulation applications at both higher and lower power levels.
Features
- JEDEC registered 1N6910 - 1N6912 series.
- Oxide passivated junction construction.
- Guard ring protected for enhanced reverse energy capability.
- Epitaxial construction for minimum forward voltage drop.
- Hermetically sealed, low-profile ceramic SMT power package.
- Available as JAN, JANTX, and JANTXV per MIL-PRF-19500/723 (see part nomenclature for all available options).
- RoHS compliant versions available (commercial grade only).
Applications
- Low package inductance.
- Ultra-low thermal resistance.
- Leadless versions available for special requirements, such as 1N6910UTK2, 1N6911UTK2, and 1N6912UTK2.
- Robust ceramic and metal construction, no wire bonding.
- High surge capability with dual-sided heat dissipation.
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |