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onsemi FGH75T65UPD
| Manufacturer | |
| MPN | FGH75T65UPD |
| LCSC Part # | C605143 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | IGBT 650V 150A TO-247 |
| Datasheet | onsemi FGH75T65UPD |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 166ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 32ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 2.85mJ | |
| Input Capacitance(Cies) | 5.665nF | |
| Output Capacitance(Coes) | 205pF | |
| Gate Charge(Qg) | 385nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 166ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 32ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 2.85mJ | |
| Input Capacitance(Cies) | 5.665nF | |
| Output Capacitance(Coes) | 205pF | |
| Gate Charge(Qg) | 385nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Using Novel Field Stop Trench IGBT Technology, new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.
Features
AI Translation
- Maximum Junction Temperature: T_J = 175°C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: V_CE(sat) = 1.65 V (Typ.) @ I_C = 75 A
- High Input Impedance
- Tightened Parameter Distribution
- AEC−Q101 Qualified and PPAP Capable
- This Device is Pb−Free and is RoHS Compliant
Applications
AI Translation
- Automotive Chargers, Converters, High Voltage Auxiliaries
- Solar Inverters, UPS, Digital Power Generator
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 23
23 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.6664 | $ 7.67 |
| 10+ | $ 6.9195 | $ 69.20 |
| 30+ | $ 6.4643 | $ 193.93 |
| 100+ | $ 6.0819 | $ 608.19 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 166ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 32ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 2.85mJ | |
| Input Capacitance(Cies) | 5.665nF | |
| Output Capacitance(Coes) | 205pF | |
| Gate Charge(Qg) | 385nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Td(off) | 166ns | |
| Pd - Power Dissipation | 375W | |
| Td(on) | 32ns | |
| Current - Collector(Ic) | 150A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 100pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@75mA | |
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 2.3V@75A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 85ns | |
| Switching Energy(Eoff) | 1.2mJ | |
| Turn-On Energy (Eon) | 2.85mJ | |
| Input Capacitance(Cies) | 5.665nF | |
| Output Capacitance(Coes) | 205pF | |
| Gate Charge(Qg) | 385nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Using Novel Field Stop Trench IGBT Technology, new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.
Features
AI Translation
- Maximum Junction Temperature: T_J = 175°C
- Positive Temperature Co−efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: V_CE(sat) = 1.65 V (Typ.) @ I_C = 75 A
- High Input Impedance
- Tightened Parameter Distribution
- AEC−Q101 Qualified and PPAP Capable
- This Device is Pb−Free and is RoHS Compliant
Applications
AI Translation
- Automotive Chargers, Converters, High Voltage Auxiliaries
- Solar Inverters, UPS, Digital Power Generator
C605143 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| SPT75N65F1 | SPTECH | Similar | TO-247-3 | 20 | $2.8741 $3.0253 | ||
| FGH75T65SHDT-F155 | onsemi | Similar | TO-247-3 | 7 | $ 7.5627 | ||
| MSG75T65FQC | MASPOWER | Similar | TO-247 | 23 | $ 5.4177 | ||
| FGH75T65SHD-F155 | onsemi | Similar | TO-247-G03 | 33 | $ 7.0802 | ||
| MSG100T65BLC0 | MASPOWER | Similar | TO-247 | 5 | $ 3.0422 |
5 more alternative parts.View all substitutes