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onsemi FFSH5065A

Manufacturer
onsemi
MPN
FFSH5065A
LCSC Part #
C605115
Packaging
TO-247-2
Customer #
Key Attributes
DIODE SIC 650V 60A TO-247-2
Datasheetonsemi FFSH5065A
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingTO-247-2
Operating Junction Temperature Range-55℃~+175℃
Diode ConfigurationStandalone
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.51V@50A
Reverse Leakage Current (Ir)200uA@650V
Non-Repetitive Peak Forward Surge Current230A
Current - Rectified60A
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Introduction

AI Translation

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Features

AI Translation
  • Max Junction Temperature 175°C
  • Avalanche Rated 240 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

AI Translation
  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits