MICROCHIP 1N6941UTK3
| Manufacturer | |
| MPN | 1N6941UTK3 |
| LCSC Part # | C6047912 |
| Packaging | - |
| Customer # | |
| Key Attributes | 30V 500mV@50A 150A Single Diodes |
| Datasheet | MICROCHIP 1N6941UTK3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 500mV@50A | |
| Reverse Leakage Current (Ir) | 5mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 150A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Type | Description | |
|---|---|---|
| Voltage - Forward(Vf@If) | 500mV@50A | |
| Reverse Leakage Current (Ir) | 5mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 150A |
Introduction
This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.25 ~ 0.35°C/W). The 1N6940UTK3AS through 1N6942UTK3AS devices feature anode-to-tab polarity (standard), with cathode-to-tab versions also available as 1N6940UTK3CS through 1N6942UTK3CS. The device is also available in a tabless version. Upscreening services for high-reliability applications are additionally offered. Microsemi provides a wide range of other products to meet voltage regulation application needs at both higher and lower power levels.
Features
- JEDEC registered 1N6940 - 1N6942 series part numbers.
- Oxide passivated junction construction.
- Guard ring protected for enhanced reverse energy capability.
- Epitaxial construction for minimum forward voltage drop.
- Hermetic, low-profile ceramic SMT power package.
- JAN, JANTX, and JANTXV certifications available per MIL-PRF-19500/726 (refer to part numbering convention for all available options).
- RoHS compliant versions available (commercial grade only).
Applications
- Low package inductance.
- Ultra-low thermal resistance.
- Leadless versions available for special requirements, such as 1N6940UTK3, 1N6941UTK3, and 1N6942UTK3.
- Rugged ceramic and metal construction, wire-bond free.
- High surge capability with double-sided heat dissipation.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 613.0849 | $ 613.08 |
| 200+ | $ 244.6252 | $ 48925.04 |
| 500+ | $ 236.4501 | $ 118225.05 |
| 1,000+ | $ 232.4119 | $ 232411.90 |
Standard Packaging100/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Voltage - Forward(Vf@If) | 500mV@50A | |
| Reverse Leakage Current (Ir) | 5mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 150A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 30V |
| Type | Description | |
|---|---|---|
| Voltage - Forward(Vf@If) | 500mV@50A | |
| Reverse Leakage Current (Ir) | 5mA@30V | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Current - Rectified | 150A |
Introduction
This Schottky diode is designed for applications requiring high power density and excellent thermal dissipation performance (typically 0.25 ~ 0.35°C/W). The 1N6940UTK3AS through 1N6942UTK3AS devices feature anode-to-tab polarity (standard), with cathode-to-tab versions also available as 1N6940UTK3CS through 1N6942UTK3CS. The device is also available in a tabless version. Upscreening services for high-reliability applications are additionally offered. Microsemi provides a wide range of other products to meet voltage regulation application needs at both higher and lower power levels.
Features
- JEDEC registered 1N6940 - 1N6942 series part numbers.
- Oxide passivated junction construction.
- Guard ring protected for enhanced reverse energy capability.
- Epitaxial construction for minimum forward voltage drop.
- Hermetic, low-profile ceramic SMT power package.
- JAN, JANTX, and JANTXV certifications available per MIL-PRF-19500/726 (refer to part numbering convention for all available options).
- RoHS compliant versions available (commercial grade only).
Applications
- Low package inductance.
- Ultra-low thermal resistance.
- Leadless versions available for special requirements, such as 1N6940UTK3, 1N6941UTK3, and 1N6942UTK3.
- Rugged ceramic and metal construction, wire-bond free.
- High surge capability with double-sided heat dissipation.
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |