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DIODES DMTH69M8LFVW-13
| Manufacturer | |
| MPN | DMTH69M8LFVW-13 |
| LCSC Part # | C6021946 |
| Packaging | PowerDI3333-8 |
| Customer # | |
| Key Attributes | 60V 9.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS |
| Datasheet | DIODES DMTH69M8LFVW-13 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15.9A;45.4A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.6W;29.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 9.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.925nF | |
| Gate Charge(Qg) | 33.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15.9A;45.4A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.6W;29.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 9.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.925nF | |
| Gate Charge(Qg) | 33.5nC@10V |
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Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% Unclamped Inductive Switching (UIS) tested during production — ensures greater reliability and durability in end applications
- Low on-resistance
- Small, thermally efficient package enables higher density end products
- Solderable flanks facilitate optical inspection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
- AEC-Q101 qualified for high reliability
- Automotive-grade variant available (DMTH69M8LFVWQ) with separate datasheet
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6289 | $ 0.63 |
| 200+ | $ 0.2516 | $ 50.32 |
| 500+ | $ 0.2425 | $ 121.25 |
| 1,000+ | $ 0.2395 | $ 239.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15.9A;45.4A | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | 3.6W;29.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 9.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.925nF | |
| Gate Charge(Qg) | 33.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI3333-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 15.9A;45.4A | |
| Gate Threshold Voltage (Vgs(th)) | - |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.6W;29.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF | |
| RDS(on) | 9.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.925nF | |
| Gate Charge(Qg) | 33.5nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% Unclamped Inductive Switching (UIS) tested during production — ensures greater reliability and durability in end applications
- Low on-resistance
- Small, thermally efficient package enables higher density end products
- Solderable flanks facilitate optical inspection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
- AEC-Q101 qualified for high reliability
- Automotive-grade variant available (DMTH69M8LFVWQ) with separate datasheet
Applications
AI Translation
- Backlight Illumination - Power Management Function - DC-DC Converter
C6021946 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SIS184LDN-T1-GE3 | VISHAY | PowerPAK1212-8 | 65 | $ 2.372 | ||
| SISS32DN-T1-GE3 | VISHAY | PowerPAK1212-8S | 8 | $ 3.0105 | ||
| DMTH69M8LFVWQ-13 | DIODES | PowerDI3333-8 | 0 | $ 0.6531 | ||
| DMTH69M8LFVW-7 | DIODES | PowerDI3333-8 | 0 | $ 0.7259 | ||
| DMT10H009LFG-13 | DIODES | PowerDI3333-8 | 0 | $ 1.1805 | ||
| DMT10H009LFG-7 | DIODES | PowerDI3333-8 | 0 | $ 1.1805 | ||
| DMTH8008SFG-7 | DIODES | PowerDI3333-8 | 0 | $ 1.0968 | ||
| DMT10H009SCG-13 | DIODES | VDFN3333-8 | 0 | $ 0.9124 | ||
| DMT10H009SCG-7 | DIODES | VDFN3333-8 | 0 | $ 0.9123 | ||
| DMTH8008SFG-13 | DIODES | PowerDI3333-8 | 0 | $ 1.1958 |