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DIODES DMT15H017LPSW-13
| Manufacturer | |
| MPN | DMT15H017LPSW-13 |
| LCSC Part # | C6021903 |
| Packaging | PowerDI5060-8 |
| Customer # | |
| Key Attributes | 150V 2.6V 17.5mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS |
| Datasheet | DIODES DMT15H017LPSW-13 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 9.4A;58A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.3W;89W | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.369nF | |
| Gate Charge(Qg) | 50nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 9.4A;58A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.3W;89W | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.369nF | |
| Gate Charge(Qg) | 50nC@10V |
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Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance. The device is ideally suited for notebook battery power management and load switching applications.
Features
AI Translation
- 100% UIS tested in production for enhanced reliability and durability in end applications
- Thermally efficient package for lower operating temperatures
- High conversion efficiency
- Low on-resistance RDS(ON) minimizes conduction losses
- Low input capacitance
- Fast switching speed
- Package height less than 1.1mm, ideal for slim and thin applications (PowerDI)
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "Green" device
Applications
AI Translation
- Synchronous rectification
- Power switches
- Class D audio amplifiers
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9745 | $ 1.97 |
| 200+ | $ 0.788 | $ 157.60 |
| 500+ | $ 0.7622 | $ 381.10 |
| 1,000+ | $ 0.7486 | $ 748.60 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 9.4A;58A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.3W;89W | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.369nF | |
| Gate Charge(Qg) | 50nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 9.4A;58A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | 1.3W;89W | |
| RDS(on) | 17.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.369nF | |
| Gate Charge(Qg) | 50nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance. The device is ideally suited for notebook battery power management and load switching applications.
Features
AI Translation
- 100% UIS tested in production for enhanced reliability and durability in end applications
- Thermally efficient package for lower operating temperatures
- High conversion efficiency
- Low on-resistance RDS(ON) minimizes conduction losses
- Low input capacitance
- Fast switching speed
- Package height less than 1.1mm, ideal for slim and thin applications (PowerDI)
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "Green" device
Applications
AI Translation
- Synchronous rectification
- Power switches
- Class D audio amplifiers
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBA90N15 | HUASHUO | PRPAK5x6-8 | 181 | $ 0.9295 | ||
| LN7910DT1WG | LRC | DFN-8(5x6) | 1,516 | $ 1.2365 | ||
| H75N15FB | Huixin | DFN-8(5x6) | 1,404 | $2.2902 $2.6024 | ||
| SP015N09GHNK | Siliup | PDFN-8L(5x6) | 32 | $ 0.8363 | ||
| SIR696DP-T1-GE3-VB | VBsemi Elec | DFN-8-EP(5x6) | 60 | $2.1363 $2.5132 | ||
| WMB115N15HG4 | Wayon | PDFN5060-8L | 49 | $ 1.0561 | ||
| XRS100N15F | XNRUSEMI | PDFN-8L(5x6) | 0 | $0.9202 $0.9686 | ||
| X12N15GHV8 | XYD | PDFN-8L(5x6) | 0 | $ 1.0834 | ||
| JMSH1507AGN-13 | Jiangsu JieJie Microelectronics | DFN-8(5x6) | 0 | $ 1.9856 | ||
| FDMS8D8N15C | onsemi | Power-56 | 0 | $ 5.6099 |