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Hangzhou Silan Microelectronics SVF18N65F product image
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Hangzhou Silan Microelectronics SVF18N65F

Manufacturer
Hangzhou Silan MicroelectronicsAsian Brands
MPN
SVF18N65F
LCSC Part #
C601616
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 650V 18A TO-220
DatasheetHangzhou Silan Microelectronics SVF18N65F
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHangzhou Silan Microelectronics
PackagingTO-220
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Output Capacitance(Coss)233.3pF
Current - Continuous Drain(Id)18A
Ciss-Input Capacitance2.7063nF
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss)1.8pF
RDS(on)480mΩ@10V
Number1 N-channel
Gate Charge(Qg)37.08nC@10V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Introduction

AI Translation

SVF18N65F/T/PN is an N-channel enhancement-mode power MOSFET fabricated using Silan's proprietary F-Cell high-voltage planar VDMOS technology. The improved process and cell structure are specially designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.

Features

AI Translation
  • 18A, 650V, RDS(on)(typ) = 0.48Ω @ VGS = 10V
  • Low gate charge
  • Low Crss
  • Fast switching
  • Improved dv/dt capability

Applications

AI Translation
  • AC-DC power supply
  • DC-DC converter
  • H-bridge PWM motor driver