Infineon S25HL512TDPBHV010
| Manufacturer | |
| MPN | S25HL512TDPBHV010 |
| LCSC Part # | C5880856 |
| Packaging | BGA-24(6x8) |
| Customer # | |
| Key Attributes | 512Mbit 2.7V~3.6V 166MHz SPI BGA-24(6x8) Memory |
| Datasheet | Infineon S25HL512TDPBHV010 |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | BGA-24(6x8) | |
| Operating Temperature | - | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Interface | SPI | |
| Standby Supply Current | 0.014mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | BGA-24(6x8) | |
| Operating Temperature | - | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Interface | SPI | |
| Standby Supply Current | 0.014mA |
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Features
AI Translation
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 16.8395 | $ 16.84 |
| 338+ | $ 6.7201 | $ 2271.39 |
| 676+ | $ 6.4947 | $ 4390.42 |
| 1,014+ | $ 6.3851 | $ 6474.49 |
Standard Packaging338/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | BGA-24(6x8) | |
| Operating Temperature | - | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles | |
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Interface | SPI | |
| Standby Supply Current | 0.014mA |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | Infineon | |
| Packaging | BGA-24(6x8) | |
| Operating Temperature | - | |
| Features | Power-on reset;ECC error correction | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 1,280,000 Cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 166MHz | |
| Data Retention - TDR (Year) | 25 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Interface | SPI | |
| Standby Supply Current | 0.014mA |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- 45nm technology, 2 bits stored per memory array cell
- Multiple sector architecture options: uniform (all sectors 256KB), hybrid 1 (top or bottom 32×4KB sectors, remainder 256KB), hybrid 2 (top and bottom 16×4KB sectors each, remainder 256KB)
- Page program buffer: 256 or 512 bytes
- 1024-byte (32×32 bytes) one-time programmable Security Silicon region
- Quad SPI interface supporting multiple protocols (1S-1S-4S, 1S-4S-4S, etc.); SDR up to 83 Mbps (166 MHz clock), DDR up to 102 Mbps (102 MHz clock)
- Dual SPI interface supporting 1S-2S-2S protocol; SDR up to 41.5 Mbps (166 MHz clock)
- Standard SPI interface supporting 1S-1S-1S protocol; SDR up to 21 Mbps (166 MHz clock)
- Functional safety features compliant with ISO 26262 ASIL B, ASIL D ready
- Endurance Flex architecture with high-endurance and extended data retention partitions
- Data integrity CRC for memory array error detection
- Secure boot: reports device initialization failures, detects configuration corruption, and provides recovery options
- ECC with single-bit error correction and double-bit error detection
- Sector erase status indicator for power interruption during erase
- Protection features including legacy memory array and configuration protection, and advanced sector protection at individual sector granularity
- Auto-boot for immediate memory array access after power-up
- Hardware reset via CS#, dedicated RESET# pin, or DQ3_RESET# pin
- SFDP support for device capability and feature discovery
- Device ID, manufacturer ID, and identification
- Data integrity: 256Mb main array minimum 640K program/erase cycles; 512Mb: 1.28M cycles; 1Gb: 2.56M cycles; 4KB sectors on all devices minimum 300K program/erase cycles; minimum 25-year data retention
- Operating voltage: 1.7V to 2.0V (HS-T) or 2.7V to 3.6V (HL-T)
- Operating temperature: Industrial -40°C to +85°C; Extended Industrial -40°C to +105°C; Automotive AEC-Q100 Grade 3: -40°C to +85°C; Grade 2: -40°C to +105°C; Grade 1: -40°C to +125°C
- Package options: 256Mb and 512Mb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (6×8 mm), 16-pin SOIC (300mil), 8-contact WSON (6×8 mm); 1Gb — 16-pin SOIC (300mil) SO3016, 24-ball BGA (8×8 mm), 16-pin SOIC (300mil)
C5880856 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| S26HL512TFPBHV000 | Infineon | FBGA-24(6x8) | 0 | $ 20.0459 | ||
| S25HL512TDPBHB010 | Infineon | BGA-24(6x8) | 0 | $ 18.9097 | ||
| S26HL512TFPBHM010 | Infineon | FBGA-24(6x8) | 0 | $ 23.9393 | ||
| S25HL512TDPBHI013 | Infineon | BGA-24(6x8) | 0 | $ 17.7866 | ||
| S26HL512TFPBHV013 | Infineon | FBGA-24(6x8) | 0 | $ 25.6586 | ||
| S26HL512TFPBHB003 | Infineon | FBGA-24(6x8) | 0 | $ 31.6804 | ||
| S26HL512TFPBHV010 | Infineon | FBGA-24(6x8) | 0 | $ 20.0459 | ||
| S25HL512TFABHV010 | Infineon | BGA-24(6x8) | 0 | $ 17.6389 | ||
| S25HL512TDPBHM013 | Infineon | FBGA-24(6x8) | 0 | $ 28.0051 | ||
| S25HL512TDPBHB013 | Infineon | FBGA-24(6x8) | 0 | $ 26.4772 | ||
| S25HL512TFABHB013 | Infineon | BGA-24(6x8) | 0 | $ 28.1199 | ||
| S25HL512TFABHV013 | Infineon | BGA-24(6x8) | 0 | $ 22.9129 | ||
| S26HL512TFPBHB000 | Infineon | FBGA-24(6x8) | 0 | $ 21.9448 | ||
| S26HL512TFPBHB013 | Infineon | FBGA-24(6x8) | 0 | $ 36.2091 | ||
| S28HL512TFPBHB010 | Infineon | FBGA-24(6x8) | 0 | $ 22.5127 | ||
| S26HL512TFPBHI003 | Infineon | FBGA-24(6x8) | 0 | $ 23.9555 | ||
| S28HL512TFPBHB013 | Infineon | FBGA-24(6x8) | 0 | $ 31.6826 | ||
| S28HL512TFPBHV010 | Infineon | FBGA-24(6x8) | 0 | $ 20.0403 | ||
| S25HL512TDPBHV013 | Infineon | BGA-24(6x8) | 0 | $ 19.1926 | ||
| S26HL512TFPBHV003 | Infineon | FBGA-24(6x8) | 0 | $ 25.6604 |

