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micron MT25QL512ABB8ESFE01-2SIT TR
| Manufacturer | |
| MPN | MT25QL512ABB8ESFE01-2SIT TR |
| LCSC Part # | C5813024 |
| Packaging | SOIC-16-300mil |
| Customer # | |
| Key Attributes | 512Mbit 2.7V~3.6V 133MHz SPI SOIC-16-300mil Memory RoHS |
| Datasheet | micron MT25QL512ABB8ESFE01-2SIT TR |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 16 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.8ms | |
| Standby Supply Current | 30uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.8ms | |
| Standby Supply Current | 30uA | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols in both STR and DTR – Extended I/O protocol – Dual I/O protocol – Quad I/O protocol
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Reset pin available
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable – Permanent lock with PROGRAM OTP command
- Erase capability – Bulk erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection – Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BA20h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 10.0162 | $ 10.02 |
| 200+ | $ 3.9974 | $ 799.48 |
| 500+ | $ 3.8641 | $ 1932.05 |
| 1,000+ | $ 3.7974 | $ 3797.40 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.8ms | |
| Standby Supply Current | 30uA | |
| Interface | SPI |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | SOIC-16-300mil | |
| Operating Temperature | -40℃~+85℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 512Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Type | Description | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | 1.8ms | |
| Standby Supply Current | 30uA | |
| Interface | SPI |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency – 133 MHz (MAX) for all protocols in STR – 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols in both STR and DTR – Extended I/O protocol – Dual I/O protocol – Quad I/O protocol
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Reset pin available
- 3-byte and 4-byte address modes – enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory – Readable and user-lockable – Permanent lock with PROGRAM OTP command
- Erase capability – Bulk erase – Sector erase 64KB uniform granularity – Subsector erase 4KB, 32KB granularity
- Security and write protection – Volatile and nonvolatile locking and software write protection for each 64KB sector – Nonvolatile configuration locking – Password protection – Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size – Program/erase protection during power-up – CRC detects accidental changes to raw data
- Electronic signature – JEDEC-standard 3-byte signature (BA20h) – Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant – Minimum 100,000 ERASE cycles per sector – Data retention: 20 years (TYP)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IS25LP512MG-RMLE-TR | ISSI | SOIC-16-300mil | 8 | $ 12.8301 | ||
| W25Q512JVFIQ | Winbond | SOIC-16-300mil | 1,640 | $ 12.5272 | ||
| MT25QL512ABB8ESF-0SIT | micron | SO-16-300mil | 221 | $ 108.9705 | ||
| S25FL512SAGMFI011 | Infineon/CYPRESS | SOIC-16-300mil | 20 | $ 6.4775 | ||
| S25FL512SAGMFV010 | Infineon/CYPRESS | SOIC-16-300mil | 10 | $ 13.0044 | ||
| S25FL512SAGMFIR13 | Infineon/CYPRESS | SOIC-16-300mil | 5 | $ 18.8103 | ||
| IS25LP512MG-RMLI | ISSI | SOIC-16-300mil | 0 | $ 16.2785 | ||
| MT25TL512BBA8ESF-0AAT TR | micron | SOP-16-300mil | 0 | $ 10.0781 | ||
| IS25LP512MG-RMLE-TY | ISSI | SOIC-16-300mil | 0 | $ 9.1268 | ||
| MX25LM51245GMI00 | MXIC | SOP-16-300mil | 0 | $ 38.8442 | ||
| S25FL512SAGMFVR10 | Infineon/CYPRESS | SOIC-16-300mil | 0 | $ 0.7006 | ||
| S25FL512SDSMFBG10 | Infineon/CYPRESS | SOIC-16-300mil | 0 | $ 0.7854 | ||
| S79FL512SDSMFBG01 | Infineon/CYPRESS | SOIC-16-300mil | 0 | $ 0.8883 | ||
| S25FL512SAGMFI013 | Infineon/CYPRESS | SOIC-16-300mil | 0 | $ 5.9031 | ||
| W25Q512JVFIM | Winbond | SOIC-16-300mil | 0 | $ 6.3418 | ||
| W25Q512JVFIM TR | Winbond | SOIC-16-300mil | 0 | $ 6.3983 |