MACOM MA4E2514L-1116

The MA4E2514 SURMOUNT Diode T-Type Series are silicon low-barrier and medium-barrier Schottky devices fabricated using a patented Heterolithic Microwave Integrated Circuit process. The HMIC circuit consists of silicon pillars forming diodes or via conductors, embedded in a glass dielectric that serves as a low-dispersion, low-loss microstrip transmission medium. The combination of silicon and glass enables HMIC devices to achieve excellent loss and power dissipation characteristics in a low-profile, reliable package.

SURMOUNT Schottky devices are an ideal choice for circuits requiring the low parasitics of beam-lead devices combined with the superior mechanical properties of chip devices. The SURMOUNT structure uses extremely low-resistance silicon vias to connect the Schottky contact to the metallized mounting pad on the bottom surface of the chip. These devices are reliable, repeatable, and offer a low-cost, high-performance alternative to conventional devices. They exhibit lower ESD sensitivity than conventional beam-lead Schottky diodes.

The multilayer metallization used in SURMOUNT Schottky junction fabrication includes a platinum diffusion barrier, enabling all devices to withstand a non-operating stability bake of 16 hours at 300°C.

The "0505" footprint allows surface-mount placement and versatile polarity orientation.

Case Style 1116.

• Extremely low parasitic capacitance and inductance
• Surface-mountable in microwave circuits without bonding wires
• Robust HMIC structure with polyimide scratch protection layer
• Reliable multilayer metallization with diffusion barrier, 100% stability bake (300°C, 16 hours)
• Lower ESD damage susceptibility

• Mixer
• Subharmonic Mixer
• Detector
• Limiter