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Littelfuse/IXYS IXTR170P10P product image
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Littelfuse/IXYS IXTR170P10P

Manufacturer
MPN
IXTR170P10P
LCSC Part #
C5658379
Packaging
-
Customer #
Key Attributes
100V 170A 2V 312W 15.4mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS
DatasheetLittelfuse/IXYS IXTR170P10P
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 5.5947$ 5.59
210+$ 2.2323$ 468.78
510+$ 2.1582$ 1100.68
990+$ 2.1212$ 2099.99
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerLittelfuse/IXYS
Packaging-
Drain to Source Voltage100V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)170A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation312W
RDS(on)15.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)930pF
Number1 P-Channel
Gate Charge(Qg)240nC@10V

Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Silicon die on Direct Copper Bonded (DCB) ceramic substrate
  • UL-recognized package
  • Isolated mounting surface
  • 2500V electrical isolation
  • Dynamic dv/dt rated
  • High current handling capability
  • Avalanche rated
  • Fast intrinsic diode
  • Rugged Polar™ process
  • Low gate charge QG
  • Low drain-to-heatsink capacitance
  • Low package inductance
  • Easy to mount
  • Space-saving
  • High power density

Applications

AI Translation
  • High-side switch
  • Push-pull amplifier
  • DC chopper
  • Automatic test equipment
  • Current regulator