Littelfuse/IXYS IXTR170P10P
| Manufacturer | |
| MPN | IXTR170P10P |
| LCSC Part # | C5658379 |
| Packaging | - |
| Customer # | |
| Key Attributes | 100V 170A 2V 312W 15.4mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS |
| Datasheet | Littelfuse/IXYS IXTR170P10P |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 170A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 15.4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 930pF | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 240nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 170A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 15.4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 930pF | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 240nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Silicon die on Direct Copper Bonded (DCB) ceramic substrate
- UL-recognized package
- Isolated mounting surface
- 2500V electrical isolation
- Dynamic dv/dt rated
- High current handling capability
- Avalanche rated
- Fast intrinsic diode
- Rugged Polar™ process
- Low gate charge QG
- Low drain-to-heatsink capacitance
- Low package inductance
- Easy to mount
- Space-saving
- High power density
Applications
AI Translation
- High-side switch
- Push-pull amplifier
- DC chopper
- Automatic test equipment
- Current regulator
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 5.5947 | $ 5.59 |
| 210+ | $ 2.2323 | $ 468.78 |
| 510+ | $ 2.1582 | $ 1100.68 |
| 990+ | $ 2.1212 | $ 2099.99 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 170A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 15.4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 930pF | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 240nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Littelfuse/IXYS | |
| Packaging | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 170A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 312W | |
| RDS(on) | 15.4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 930pF | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 240nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Silicon die on Direct Copper Bonded (DCB) ceramic substrate
- UL-recognized package
- Isolated mounting surface
- 2500V electrical isolation
- Dynamic dv/dt rated
- High current handling capability
- Avalanche rated
- Fast intrinsic diode
- Rugged Polar™ process
- Low gate charge QG
- Low drain-to-heatsink capacitance
- Low package inductance
- Easy to mount
- Space-saving
- High power density
Applications
AI Translation
- High-side switch
- Push-pull amplifier
- DC chopper
- Automatic test equipment
- Current regulator
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

