VISHAY IRLI520GPBF
| Manufacturer | |
| MPN | IRLI520GPBF |
| LCSC Part # | C5656497 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 100V 5.1A 37W 270mΩ@5V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet | VISHAY IRLI520GPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Ciss-Input Capacitance | 490pF | |
| Pd - Power Dissipation | 37W | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 270mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Ciss-Input Capacitance | 490pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37W | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 270mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional insulating hardware in commercial and industrial applications. The molding compound used provides high isolation capability with low thermal resistance between the heat spreader and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be mounted to a heatsink using a single clip or a single screw.
Features
- Isolated package
- High-voltage isolation = 2.5 kV\textRMS(t = 60 s; f = 60 Hz)
- Heatsink-to-lead creepage distance = 4.8 mm
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Easy paralleling
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.4291 | $ 2.43 |
| 200+ | $ 0.9698 | $ 193.96 |
| 500+ | $ 0.938 | $ 469.00 |
| 1,000+ | $ 0.9214 | $ 921.40 |
Standard Packaging1000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Ciss-Input Capacitance | 490pF | |
| Pd - Power Dissipation | 37W | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 270mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5.1A | |
| Ciss-Input Capacitance | 490pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 37W | |
| Reverse Transfer Capacitance (Crss) | 30pF | |
| RDS(on) | 270mΩ@5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12nC@5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, robust device design, low on-resistance, and high cost-effectiveness. The TO-220 FULLPAK package eliminates the need for additional insulating hardware in commercial and industrial applications. The molding compound used provides high isolation capability with low thermal resistance between the heat spreader and external heatsink. This isolation is equivalent to using a 100-micron mica barrier in a standard TO-220 product. The FULLPAK package can be mounted to a heatsink using a single clip or a single screw.
Features
- Isolated package
- High-voltage isolation = 2.5 kV\textRMS(t = 60 s; f = 60 Hz)
- Heatsink-to-lead creepage distance = 4.8 mm
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- Fast switching
- Easy paralleling
C5656497 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 9N20 | GOODWORK | Similar | TO-220 | 10 | $0.1773 $0.3546 | ||
| IRF630N | Minos | Similar | TO-220 | 2,806 | $0.2324 $0.2582 | ||
| FDPF20N50FT | onsemi | Similar | TO-220 | 39 | $ 6.3864 | ||
| IPA083N10N5 | Infineon | Similar | TO-220 | 93 | $ 2.242 | ||
| WGP20N50SE | Wild Goose | Similar | TO-220 | 284 | $ 0.6673 |