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EDA ModelsEasyEDA
onsemi NJVMJD128T4G
| Manufacturer | |
| MPN | NJVMJD128T4G |
| LCSC Part # | C556442 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 120V 1000 8A PNP DPAK Single Bipolar Transistors RoHS |
| Datasheet | onsemi NJVMJD128T4G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | 4MHz | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 1.75W | |
| Current - Collector(Ic) | 8A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | 4MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 1.75W | |
| Current - Collector(Ic) | 8A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- Monolithic construction with integrated base-emitter shunt resistors
- High DC current gain: hFE = 2500 (typical) at IC = 4.0 Adc
- Epoxy meets UL 94 V-0 at 0.125 inch thickness
- ESD rating: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free devices
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
- Automotive applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6952 | $ 0.70 |
| 10+ | $ 0.5672 | $ 5.67 |
| 30+ | $ 0.5023 | $ 15.07 |
| 100+ | $ 0.4392 | $ 43.92 |
| 500+ | $ 0.4003 | $ 200.15 |
| 1,000+ | $ 0.3808 | $ 380.80 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | 4MHz | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 1.75W | |
| Current - Collector(Ic) | 8A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | DPAK | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃@(Tj) | |
| Vbe On(VBE(on)) | 2.8V | |
| Transition frequency(fT) | 4MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 1.75W | |
| Current - Collector(Ic) | 8A | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 4V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- Monolithic construction with integrated base-emitter shunt resistors
- High DC current gain: hFE = 2500 (typical) at IC = 4.0 Adc
- Epoxy meets UL 94 V-0 at 0.125 inch thickness
- ESD rating: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free devices
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
- Automotive applications
C556442 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MJD128T4G | onsemi | DPAK | 0 | $ 1.4736 |