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Nexperia BUK7S1R2-40HJ
| Manufacturer | |
| MPN | BUK7S1R2-40HJ |
| LCSC Part # | C5563913 |
| Packaging | LFPAK-56 |
| Customer # | |
| Key Attributes | 43V 300A 3V 294W 1.06mΩ@10V 1 N-channel N-Channel LFPAK-56 Single FETs, MOSFETs RoHS |
| Datasheet | Nexperia BUK7S1R2-40HJ |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK-56 | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 300A | |
| Output Capacitance(Coss) | 1.352nF | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 294W | |
| RDS(on) | 1.06mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 244pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.014nF | |
| Gate Charge(Qg) | 80nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK-56 | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 300A | |
| Output Capacitance(Coss) | 1.352nF | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 294W | |
| RDS(on) | 1.06mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 244pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.014nF | |
| Gate Charge(Qg) | 80nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a copper-clip LFPAK88 package. Fully designed and qualified to meet AEC-Q101 requirements, with high performance and high reliability.
Features
AI Translation
- Fully compliant with and exceeding AEC-Q101 automotive-grade standards
- Operating temperature range -55°C to +175°C, suitable for high thermal dissipation environments
- LFPAK88 package:
- More space-saving design vs. legacy wire-bond packages such as D2PAK, improved power density for today's space-constrained high-power automotive applications
- Low-profile package and copper clip enable efficient thermal dissipation
- Advantages of LFPAK copper clip technology over wire-bond packages:
- Improved maximum current carrying capability and excellent current distribution
- Improved on-state resistance RDSon
- Low source inductance
- Low thermal resistance Rth
- LFPAK gull-wing leads:
- Flexible leads absorb mechanical and thermal cycling stress for improved board-level reliability, unlike conventional QFN packages
- Visual (AOI) solder inspection without costly X-ray equipment
- Easy solder wetting for strong mechanical solder joints
- Unique 40V Trench 9 super-junction technology:
- Reduced cell pitch and super-junction mesa for lower on-resistance RDSon in the same footprint
- Improved safe operating area and avalanche capability vs. standard TrenchMOS
- Tight VGS(th) tolerance for easy parallel MOSFET operation
Applications
AI Translation
- 12 V automotive systems
- 48 V DC/DC systems (12 V secondary side)
- Higher-power motor, lamp, and solenoid control
- Reverse polarity protection
- LED lighting
- Ultra-high-performance power switching
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.055 | $ 0.06 |
| 200+ | $ 0.022 | $ 4.40 |
| 500+ | $ 0.0212 | $ 10.60 |
| 1,000+ | $ 0.0209 | $ 20.90 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK-56 | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 300A | |
| Output Capacitance(Coss) | 1.352nF | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 294W | |
| RDS(on) | 1.06mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 244pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.014nF | |
| Gate Charge(Qg) | 80nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK-56 | |
| Drain to Source Voltage | 43V | |
| Operating Temperature | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 300A | |
| Output Capacitance(Coss) | 1.352nF | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 294W | |
| RDS(on) | 1.06mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 244pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.014nF | |
| Gate Charge(Qg) | 80nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Automotive-grade N-channel MOSFET utilizing the latest Trench 9 low-ohmic superjunction technology, housed in a copper-clip LFPAK88 package. Fully designed and qualified to meet AEC-Q101 requirements, with high performance and high reliability.
Features
AI Translation
- Fully compliant with and exceeding AEC-Q101 automotive-grade standards
- Operating temperature range -55°C to +175°C, suitable for high thermal dissipation environments
- LFPAK88 package:
- More space-saving design vs. legacy wire-bond packages such as D2PAK, improved power density for today's space-constrained high-power automotive applications
- Low-profile package and copper clip enable efficient thermal dissipation
- Advantages of LFPAK copper clip technology over wire-bond packages:
- Improved maximum current carrying capability and excellent current distribution
- Improved on-state resistance RDSon
- Low source inductance
- Low thermal resistance Rth
- LFPAK gull-wing leads:
- Flexible leads absorb mechanical and thermal cycling stress for improved board-level reliability, unlike conventional QFN packages
- Visual (AOI) solder inspection without costly X-ray equipment
- Easy solder wetting for strong mechanical solder joints
- Unique 40V Trench 9 super-junction technology:
- Reduced cell pitch and super-junction mesa for lower on-resistance RDSon in the same footprint
- Improved safe operating area and avalanche capability vs. standard TrenchMOS
- Tight VGS(th) tolerance for easy parallel MOSFET operation
Applications
AI Translation
- 12 V automotive systems
- 48 V DC/DC systems (12 V secondary side)
- Higher-power motor, lamp, and solenoid control
- Reverse polarity protection
- LED lighting
- Ultra-high-performance power switching
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| PSMNR90-40YSNX | Nexperia | Similar | LFPAK-56 | 10 | $ 2.7482 | ||
| NTMJS1D4N06CL-VB | VBsemi Elec | Similar | LFPAK-56 | 0 | $ 2.0892 | ||
| NTMJS1D6N06CL-VB | VBsemi Elec | Similar | LFPAK-56 | 0 | $ 2.0892 | ||
| NVMJS1D4N06CL-VB | VBsemi Elec | Similar | LFPAK-56 | 0 | $ 2.0892 | ||
| NVMJS1D6N06CL-VB | VBsemi Elec | Similar | LFPAK-56 | 0 | $ 2.0892 |
5 more alternative parts.View all substitutes