Nexperia PSMN2R0-40YLDX
| Manufacturer | |
| MPN | PSMN2R0-40YLDX |
| LCSC Part # | C553248 |
| Packaging | LFPAK56(PowerSO-8) |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 180A LFPAK56(PowerSO-8) |
| Datasheet | Nexperia PSMN2R0-40YLDX |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 1.047nF | |
| Ciss-Input Capacitance | 4.701nF | |
| Pd - Power Dissipation | 166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 181pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 92nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.73V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 1.047nF | |
| Ciss-Input Capacitance | 4.701nF | |
| Pd - Power Dissipation | 166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 181pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 92nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.73V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Features
AI Translation
- 180 A continuous ID(max) rating
- Avalanche rated, 100% tested at 1AS = 160 A
- Strong SOA (linear-mode) rating
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low Qrr, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
- Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
- High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
- Low parasitic inductance and resistance
Applications
AI Translation
- High-performance synchronous rectification
- DC-to-DC converters
- Brushless DC motor control
- Battery protection
- Load-switch and eFuse
- Inrush management, hotswap
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 1.047nF | |
| Ciss-Input Capacitance | 4.701nF | |
| Pd - Power Dissipation | 166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 181pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 92nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.73V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | LFPAK56(PowerSO-8) | |
| Output Capacitance(Coss) | 1.047nF | |
| Ciss-Input Capacitance | 4.701nF | |
| Pd - Power Dissipation | 166W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 181pF | |
| RDS(on) | 2.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 92nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.73V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
180 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
Features
AI Translation
- 180 A continuous ID(max) rating
- Avalanche rated, 100% tested at 1AS = 160 A
- Strong SOA (linear-mode) rating
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low Qrr, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
- Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology
- High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
- Low parasitic inductance and resistance
Applications
AI Translation
- High-performance synchronous rectification
- DC-to-DC converters
- Brushless DC motor control
- Battery protection
- Load-switch and eFuse
- Inrush management, hotswap
C553248 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



