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Nexperia PEMD3,315

Manufacturer
Nexperia
MPN
PEMD3,315
LCSC Part #
C552413
Packaging
SOT-666
Customer #
Key Attributes
30 300mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS
DatasheetNexperia PEMD3,315
RoHS Compliance2 documents available
Alternative Parts4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
ManufacturerNexperia
PackagingSOT-666
Current - Collector Cutoff100nA
Transition frequency(fT)-
Emitter-Base Voltage VEBO10V
DC Current Gain30
Vce Saturation(VCE(sat))150mV
Operating Temperature-65℃~+150℃
Output Voltage(VO(on))-
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.8V
Collector - Emitter Voltage VCEO50V
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
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Introduction

AI Translation

NPN/PNP resistor-equipped transistor (RET) in SMD plastic package.

Features

AI Translation
  • Output current capability up to 100 mA
  • Integrated bias resistors
  • Simplified circuit design
  • Reduced component count
  • Lower assembly cost
  • AEC-Q101 qualified

Applications

AI Translation
  • Low-current peripheral driver
  • Control IC input
  • General-purpose transistor replacement in digital applications