Nexperia PBLS2023D,115
| Manufacturer | |
| MPN | PBLS2023D,115 |
| LCSC Part # | C551793 |
| Packaging | SOT-457 |
| Customer # | |
| Key Attributes | 30 180mW 1 NPN Pre-Biased, 1 PNP SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet | Nexperia PBLS2023D,115 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 210mV@1.8A,100mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 180mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Current - Collector(Ic) | 1.8A;100mA | |
| Collector - Emitter Voltage VCEO | 20V;50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 210mV@1.8A,100mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 180mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Current - Collector(Ic) | 1.8A;100mA | |
| Collector - Emitter Voltage VCEO | 20V;50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP low VCEsat small-signal breakthrough (BISS) transistor and NPN resistor-equipped transistor (RET) in SOT457 (SC-74) small SMD plastic package.
Features
AI Translation
- Single package integrating low VCEsat (BISS) transistor and resistor-equipped transistor
- Low threshold voltage (< 1 V) compared to MOSFET
- Space-saving solution
- Reduced component count
- AEC-Q101 qualified
Applications
AI Translation
- Power line switch
- Battery charger switch
- High-side switch for LED drivers and backlights
- Portable devices
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 210mV@1.8A,100mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 180mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Current - Collector(Ic) | 1.8A;100mA | |
| Collector - Emitter Voltage VCEO | 20V;50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-457 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 130MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 30 | |
| Vce Saturation(VCE(sat)) | 210mV@1.8A,100mA | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 180mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Current - Collector(Ic) | 1.8A;100mA | |
| Collector - Emitter Voltage VCEO | 20V;50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP low VCEsat small-signal breakthrough (BISS) transistor and NPN resistor-equipped transistor (RET) in SOT457 (SC-74) small SMD plastic package.
Features
AI Translation
- Single package integrating low VCEsat (BISS) transistor and resistor-equipped transistor
- Low threshold voltage (< 1 V) compared to MOSFET
- Space-saving solution
- Reduced component count
- AEC-Q101 qualified
Applications
AI Translation
- Power line switch
- Battery charger switch
- High-side switch for LED drivers and backlights
- Portable devices
C551793 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |

