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Nexperia PBLS2023D,115

Manufacturer
MPN
PBLS2023D,115
LCSC Part #
C551793
Packaging
SOT-457
Customer #
Key Attributes
30 180mW 1 NPN Pre-Biased, 1 PNP SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS
DatasheetNexperia PBLS2023D,115
RoHS Compliance2 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
ManufacturerNexperia
PackagingSOT-457
Current - Collector Cutoff-
Transition frequency(fT)130MHz
Emitter-Base Voltage VEBO-
DC Current Gain30
Vce Saturation(VCE(sat))210mV@1.8A,100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))-
Input Resistor13kΩ
Resistor Ratio1.2
Pd - Power Dissipation180mW
Input Voltage (VI(on)@Ic,Vce)2.5V@10mA,0.3V
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Current - Collector(Ic)1.8A;100mA
Collector - Emitter Voltage VCEO20V;50V
typeNPN+PNP
Number1 NPN Pre-Biased, 1 PNP

Introduction

AI Translation

PNP low VCEsat small-signal breakthrough (BISS) transistor and NPN resistor-equipped transistor (RET) in SOT457 (SC-74) small SMD plastic package.

Features

AI Translation
  • Single package integrating low V​CEsat (BISS) transistor and resistor-equipped transistor
  • Low threshold voltage (< 1 V) compared to MOSFET
  • Space-saving solution
  • Reduced component count
  • AEC-Q101 qualified

Applications

AI Translation
  • Power line switch
  • Battery charger switch
  • High-side switch for LED drivers and backlights
  • Portable devices