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JSMSEMI STB15810-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | STB15810-JSM |
| LCSC Part # | C55106992 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | 280W 100V 110A 3.5mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI STB15810-JSM |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 2.656nF | |
| Ciss-Input Capacitance | 7.315nF | |
| Pd - Power Dissipation | 280W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 59pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 2.656nF | |
| Ciss-Input Capacitance | 7.315nF | |
| Pd - Power Dissipation | 280W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 59pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 2.656nF | |
| Ciss-Input Capacitance | 7.315nF | |
| Pd - Power Dissipation | 280W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 59pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 2.656nF | |
| Ciss-Input Capacitance | 7.315nF | |
| Pd - Power Dissipation | 280W | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 59pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 110nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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C55106992 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |