HXY MOSFET DMT64M8LCG-7-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | DMT64M8LCG-7-HXY |
| LCSC Part # | C54582837 |
| Packaging | DFN-8L(3x3) |
| Customer # | |
| Key Attributes | 60V 100A 1.7V 73.5W 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs |
| Datasheet | HXY MOSFET DMT64M8LCG-7-HXY |
| Alternative Parts | 8 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 735pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 73.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 735pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 73.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
DMT64M8LCG-7 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 60V, drain current ID = 100A
- On-resistance RDS(ON) < 4mΩ at gate-source voltage VGS = 20V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
In-Stock: 49
49 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8862$ 0.8419 | $ 0.84 |
| 10+ | $ 0.7282$ 0.6918 | $ 6.92 |
| 30+ | $ 0.6484$ 0.6160 | $ 18.48 |
| 100+ | $ 0.5685$ 0.5401 | $ 54.01 |
| 500+ | $ 0.4676$ 0.4443 | $ 222.15 |
| 1,000+ | $ 0.4431$ 0.4210 | $ 421.00 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 735pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 73.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 100A | |
| Output Capacitance(Coss) | 735pF | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 73.5W | |
| RDS(on) | 4mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.18nF | |
| Gate Charge(Qg) | 35nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
DMT64M8LCG-7 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-source voltage VDS = 60V, drain current ID = 100A
- On-resistance RDS(ON) < 4mΩ at gate-source voltage VGS = 20V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C54582837 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NTTFS5C658NLTAG-HXY | HXY MOSFET | DFN-8L(3x3) | 565 | $0.4689 $0.4935 | ||
| ISZ0702NLSATMA1-HXY | HXY MOSFET | DFN-8L(3x3) | 128 | $0.7645 $0.8994 | ||
| NVTFS5C658NLWFTAG-HXY | HXY MOSFET | DFN-8L(3x3) | 117 | $1.0650 $1.3312 | ||
| NVTFS5C658NLTAG-HXY | HXY MOSFET | DFN-8L(3x3) | 98 | $0.9468 $1.1835 | ||
| DMT64M8LCG-13-HXY | HXY MOSFET | DFN-8L(3x3) | 48 | $1.0555 $1.111 | ||
| SISS26DN-T1-GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 47 | $1.4269 $1.5019 | ||
| AM7452NA-HXY | HXY MOSFET | DFN-8L(3x3) | 44 | $1.0555 $1.111 | ||
| SQS160ELNW-T1_GE3-HXY | HXY MOSFET | DFN-8L(3x3) | 38 | $0.6640 $0.6989 |



