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HXY MOSFET IPP070N06LG-HXY product image
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HXY MOSFET IPP070N06LG-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPP070N06LG-HXY
LCSC Part #
C54582751
Packaging
TO-220
Customer #
Key Attributes
60V 80A 2.8V 120W 5.8mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPP070N06LG-HXY
In-Stock: 9
9 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6868$ 0.69
10+$ 0.5572$ 5.57
50+$ 0.4924$ 24.62
100+$ 0.4277$ 42.77
500+$ 0.3904$ 195.20
1,000+$ 0.3693$ 369.30
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-220
ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)280.25pF
Current - Continuous Drain(Id)80A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation120W
RDS(on)5.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)228pF
Number1 N-channel
Input Capacitance(Ciss)3.629nF
Gate Charge(Qg)80.85nC@10V
TypeN-Channel
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Introduction

AI Translation

IPP070N06LG utilizes advanced trench technology and design, offering excellent on-state resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 80A
  • RDS(ON) < 7mΩ at VGS = 10V

Applications

AI Translation
  • High-efficiency switch-mode power supplies
  • Power factor correction
  • Electronic lamp ballasts