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HXY MOSFET IPP070N06LG-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | IPP070N06LG-HXY |
| LCSC Part # | C54582751 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 120W 60V 80A 2.8V 5.8mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs |
| Datasheet | HXY MOSFET IPP070N06LG-HXY |
| Alternative Parts | 11 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 280.25pF | |
| Pd - Power Dissipation | 120W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| RDS(on) | 5.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 228pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.629nF | |
| Gate Charge(Qg) | 80.85nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 280.25pF | |
| Pd - Power Dissipation | 120W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| RDS(on) | 5.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 228pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.629nF | |
| Gate Charge(Qg) | 80.85nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
IPP070N06LG utilizes advanced trench technology and design, offering excellent on-state resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 80A
- RDS(ON) < 7mΩ at VGS = 10V
Applications
AI Translation
- High-efficiency switch-mode power supplies
- Power factor correction
- Electronic lamp ballasts
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 9
9 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6868$ 0.6525 | $ 0.65 |
| 10+ | $ 0.5572$ 0.5294 | $ 5.29 |
| 50+ | $ 0.4924$ 0.4678 | $ 23.39 |
| 100+ | $ 0.4277$ 0.4064 | $ 40.64 |
| 500+ | $ 0.3904$ 0.3709 | $ 185.45 |
| 1,000+ | $ 0.3693$ 0.3509 | $ 350.90 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 280.25pF | |
| Pd - Power Dissipation | 120W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| RDS(on) | 5.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 228pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.629nF | |
| Gate Charge(Qg) | 80.85nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 280.25pF | |
| Pd - Power Dissipation | 120W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| RDS(on) | 5.8mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 228pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.629nF | |
| Gate Charge(Qg) | 80.85nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
IPP070N06LG utilizes advanced trench technology and design, offering excellent on-state resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = 60V, Drain Current (ID) = 80A
- RDS(ON) < 7mΩ at VGS = 10V
Applications
AI Translation
- High-efficiency switch-mode power supplies
- Power factor correction
- Electronic lamp ballasts
C54582751 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPP065N06LGAKSA1-HXY | HXY MOSFET | TO-220 | 50 | $0.4111 $0.4327 | ||
| STP77N6F6-HXY | HXY MOSFET | TO-220 | 24 | $0.9177 $0.9659 | ||
| IPP070N06NG-HXY | HXY MOSFET | TO-220 | 21 | $0.6525 $0.6868 | ||
| STP90N6F6-HXY | HXY MOSFET | TO-220 | 1 | $1.0534 $1.1088 | ||
| FS70UMJ-06F-HXY | HXY MOSFET | TO-220 | 24 | $3.1569 $3.323 | ||
| DMTH6010SCT-HXY | HXY MOSFET | TO-220 | 24 | $1.4050 $1.4789 | ||
| DMT6010SCT-HXY | HXY MOSFET | TO-220 | 24 | $1.4050 $1.4789 | ||
| 2SK4171-HXY | HXY MOSFET | TO-220 | 24 | $0.9177 $0.9659 | ||
| HUF76445P3-HXY | HXY MOSFET | TO-220 | 24 | $0.9177 $0.9659 | ||
| AOT1606L | HXY MOSFET | TO-220 | 24 | $1.2292 $1.2938 | ||
| AOT2606L | HXY MOSFET | TO-220 | 23 | $0.7049 $0.7419 |