5% OFF
- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
HXY MOSFET SFT1445-TL-H-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SFT1445-TL-H-HXY |
| LCSC Part # | C54582570 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 100V 20A 34.7W 80mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs |
| Datasheet | HXY MOSFET SFT1445-TL-H-HXY |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.535nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.535nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SFT1445-TL-H employs advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 100V, ID = 20A
- RDS(ON) < 87mΩ (@ VGS = 10V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 45
45 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3339$ 0.3173 | $ 1.59 |
| 50+ | $ 0.2645$ 0.2513 | $ 12.57 |
| 150+ | $ 0.2348$ 0.2231 | $ 33.47 |
| 500+ | $ 0.1977$ 0.1879 | $ 93.95 |
| 2,500+ | $ 0.1811$ 0.1721 | $ 430.25 |
| 5,000+ | $ 0.1712$ 0.1627 | $ 813.50 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.535nF | |
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.535nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 34.7W | |
| Reverse Transfer Capacitance (Crss) | 37pF | |
| RDS(on) | 80mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 26.2nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SFT1445-TL-H employs advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 100V, ID = 20A
- RDS(ON) < 87mΩ (@ VGS = 10V)
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C54582570 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| NTD6416ANT4G-HXY | HXY MOSFET | Similar | TO-252 | 120 | $0.1915 $0.2127 | ||
| AUIRLR3410-HXY | HXY MOSFET | Similar | TO-252-2L | 1,805 | $0.2282 $0.2402 | ||
| IRFR3910PBF-HXY | HXY MOSFET | Similar | TO-252-2L | 185 | $0.2350 $0.2473 | ||
| IRLR3410PBF-HXY | HXY MOSFET | Similar | TO-252-2L | 165 | $0.2315 $0.2436 | ||
| HXY20N10D | HXY MOSFET | Similar | TO-252-2L | 500 | $0.1826 $0.1922 |