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HXY MOSFET AOD4126
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | AOD4126 |
| LCSC Part # | C54582552 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 27W 100V 40A 1.8V 15mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs |
| Datasheet | HXY MOSFET AOD4126 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 27W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 822pF | |
| Gate Charge(Qg) | 22.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 27W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 822pF | |
| Gate Charge(Qg) | 22.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The AOD4126 utilizes advanced SGT MOSFET technology to deliver low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.
Features
AI Translation
- Drain-source voltage (VDS) = 100V, drain current (ID) = 40A
- On-resistance (RDS(ON)) < 23mΩ at gate-source voltage (VGS) = 10V
Applications
AI Translation
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
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In-Stock: 47
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6889$ 0.6545 | $ 0.65 |
| 10+ | $ 0.5654$ 0.5372 | $ 5.37 |
| 30+ | $ 0.5037$ 0.4786 | $ 14.36 |
| 100+ | $ 0.4419$ 0.4199 | $ 41.99 |
| 500+ | $ 0.3623$ 0.3442 | $ 172.10 |
| 1,000+ | $ 0.3445$ 0.3273 | $ 327.30 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 27W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 822pF | |
| Gate Charge(Qg) | 22.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 27W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF | |
| RDS(on) | 15mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 822pF | |
| Gate Charge(Qg) | 22.7nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The AOD4126 utilizes advanced SGT MOSFET technology to deliver low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.
Features
AI Translation
- Drain-source voltage (VDS) = 100V, drain current (ID) = 40A
- On-resistance (RDS(ON)) < 23mΩ at gate-source voltage (VGS) = 10V
Applications
AI Translation
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
C54582552 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FDD86102-HXY | HXY MOSFET | Similar | TO-252-2L | 48 | $0.5048 $0.5313 | ||
| AOD2910E | HXY MOSFET | Similar | TO-252-2L | 32 | $0.6341 $0.6674 | ||
| SQD40N10-25-T4_GE3-HXY | HXY MOSFET | Similar | TO-252-2L | 171 | $0.3989 $0.4692 | ||
| DMT10H025LK3-13-HXY | HXY MOSFET | Similar | TO-252-2L | 70 | $0.3506 $0.4124 | ||
| DMT10H025SK3-13-HXY | HXY MOSFET | Similar | TO-252-2L | 88 | $0.4442 $0.5552 |
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