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Chipanalog CA-IS3212MCS

Manufacturer
ChipanalogAsian Brands
MPN
CA-IS3212MCS
LCSC Part #
C54557219
Packaging
SOIC-8
Customer #
Key Attributes
4A 10ns 10ns 5A SOIC-8 Isolators - Gate Drivers
DatasheetChipanalog CA-IS3212MCS
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.5793$ 0.58
10+$ 0.4455$ 4.46
30+$ 0.3884$ 11.65
100+$ 0.3166$ 31.66
500+$ 0.2856$ 142.80
1,000+$ 0.266$ 266.00
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryIsolators/Isolators - Gate Drivers
ManufacturerChipanalog
PackagingSOIC-8
Quiescent Current0.55mA
Operating Temperature-40℃~+150℃
Propagation Delay(tpd)85ns;85ns
Load TypeMOSFET、IGBT、SiC、GaN
Current - Output High(IOH)4A
Rise Time10ns
Voltage - Supply13.2V~33V;3V~5.5V
Fall Time10ns
CMTI(kV/us)150kV/us
Isolation Voltage(Vrms)3750V
Number of Channels1
Current - Output Low(IOL)5A
FeaturesDead-time control;Miller clamp protection
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Introduction

AI Translation

This series of single-channel gate drivers based on capacitive isolation is designed to drive power devices such as MOSFETs, IGBTs, GaN, and SiC MOSFETs, featuring excellent dynamic performance and high reliability, with peak source/sink current capability up to 4A/5A. SiO₂ capacitive isolation technology provides electrical isolation between the control side and drive side, supporting an isolation working voltage of 1.5kVRMS and surge immunity of 12.8kVPK, with an isolation barrier lifetime exceeding 40 years at rated operating voltage, good device-to-device consistency, and common-mode transient immunity of >150 kV/μs. Control- and drive-side supply UVLO is provided, with switching behavior optimized for SiC, GaN, and IGBT applications to enhance reliability. Select models integrate a 5A peak current active Miller clamp; select models offer an external COM pin for convenient isolated drive-side split-supply biasing; select models feature a split OUTH/OUTL output configuration. Devices are available in 8-pin narrow-body or wide-body SOIC packages, rated for an operating junction temperature range of –40°C to +150°C.

Features

AI Translation
  • Drives SiC MOSFETs and IGBTs up to 2121 VPK
  • 4A/5A peak source/sink drive current capability
  • Input compatible with CMOS or TTL logic
  • Wide supply range: 3.0V to 5.5V input-side VCC supply, output drive supply (VDD – VEE) up to 33V, with multiple UVLO options: 4V, 6V, 8V, 12V
  • 40ns (typical) pulse rejection on input pins
  • 85ns (typical) propagation delay, 15ns (maximum) pulse width distortion, 15ns (maximum) inter-device delay matching
  • Available in SOIC8-WB wide-body package (creepage and clearance >8mm, 5700 VRMS isolation voltage) or SOIC8 narrow-body package (creepage and clearance >4mm, 3750 VRMS isolation voltage)
  • High CMTI: >150 kV/μs
  • Isolation barrier lifetime >40 years at rated working voltage
  • Operating junction temperature range: –40°C to 150°C
  • Safety certifications (pending): compliant with DIN EN IEC 60747-17 (VDE 0884-17), UL 1577, GB4943.1-2022, EN 62368-1, and EN 61010-1

Applications

AI Translation
  • Motor inverter
  • New energy on-board charger
  • Photovoltaic inverter
  • Energy storage converter
  • EV charging station power module