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ANHI ASW65R110E

Manufacturer
ANHIAsian Brands
MPN
ASW65R110E
LCSC Part #
C5440019
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 655V 30A TO-247
DatasheetANHI ASW65R110E
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerANHI
PackagingTO-247
Output Capacitance(Coss)239pF
Ciss-Input Capacitance2.497nF
Pd - Power Dissipation277.8W
Configuration-
Operating Temperature-55℃~+100℃
Drain to Source Voltage655V
Current - Continuous Drain(Id)30A
Reverse Transfer Capacitance (Crss)6.75pF
RDS(on)110mΩ
Number1 N-channel
Gate Charge(Qg)52nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))4.2V
TypeN-Channel

Features

AI Translation
  • Low drain-source on-resistance: RDS(ON) = 0.095Ω (typical)
  • Easy gate switching control
  • Enhancement mode: Vth = 2.8 to 4.2 V

Applications

AI Translation
  • Boost PFC switch, half-bridge, asymmetric half-bridge, series resonant half-bridge, and full-bridge topologies.
  • Server power supplies, telecom power supplies, EV charging, solar inverters, and UPS applications.