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VBsemi Elec VBQA1101N

Manufacturer
VBsemi ElecAsian Brands
MPN
VBQA1101N
LCSC Part #
C5382701
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 100V 65A DFN5x6-8
DatasheetVBsemi Elec VBQA1101N
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN5x6-8
Drain to Source Voltage100V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)132pF
Current - Continuous Drain(Id)65A
Ciss-Input Capacitance3.97nF
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss)11.2pF
RDS(on)9mΩ@10V
Number1 N-channel
Gate Charge(Qg)20nC@10V
Gate Threshold Voltage (Vgs(th))5V
TypeN-Channel
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Introduction

AI Translation

This MOSFET is designed to minimize on-resistance RDS(on) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • Trench power MOSFET
  • Junction temperature 175°C
  • Low thermal resistance package
  • 100% gate resistance (Rg) tested
  • RoHS compliant

Applications

AI Translation
  • Isolated DC/DC Converter