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Infineon IRLR2905TRLPBFRoHS

Manufacturer
Infineon
MPN
IRLR2905TRLPBF
LCSC Part #
C538166
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET N-CH 55V 42A DPAK(TO-252AA)
Datasheetpdf iconInfineon IRLR2905TRLPBF
In-Stock: 30
30 In stock, ships now
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Minimum: 1Multiple: 1Sales Unit: Piece
QtyUnit PriceTotal Amount
1+$ 1.6117$ 1.61
10+$ 1.5889$ 15.89
30+$ 1.5743$ 47.23
100+$ 1.5597$ 155.97
Standard Packaging3000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Operating Temperature-55℃~+175℃
Drain to Source Voltage55V
Current - Continuous Drain(Id)42A
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)48nC@10V
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Introduction

AI Translation

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Logic level gate drive
  • Ultra-low on-resistance
  • Surface mount (IRLR2905)
  • Straight lead (IRLU2905)
  • Advanced process technology
  • Fast switching
  • Fully avalanche rated
  • Lead-free