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Infineon IRFS4229TRLPBF

Manufacturer
Infineon
MPN
IRFS4229TRLPBF
LCSC Part #
C538018
Packaging
D2PAK
Customer #
Key Attributes
MOSFET N-CH 250V 45A D2PAK
DatasheetInfineon IRFS4229TRLPBF
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingD2PAK
Configuration-
Operating Temperature-40℃~+175℃
Drain to Source Voltage250V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)45A
Pd - Power Dissipation330W
RDS(on)42mΩ@10V
Number1 N-channel
Gate Charge(Qg)110nC@10V
Vgs±30V
TypeN-Channel
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Introduction

AI Translation

This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Features

AI Translation
  • Advanced Process Technology
  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
  • Low QG for Fast Response
  • High Repetitive Peak Current Capability for Reliable Operation
  • Short Fall & Rise Times for Fast Switching
  • 175°C Operating Junction Temperature for Improved Ruggedness
  • Repetitive Avalanche Capability for Robustness and Reliability