Infineon IPD65R950C6
| Manufacturer | |
| MPN | IPD65R950C6 |
| LCSC Part # | C536856 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | 700V 4.5A 37W 950mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPD65R950C6 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 23pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 328pF | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 23pF | |
| Current - Continuous Drain(Id) | 4.5A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 328pF | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS C6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The resulting devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Ultra-low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally superior.
Features
- Extremely low losses due to ultra-low figure of merit Rdson×Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Compliant with JEDEC (J-STD20 and JESD22) industrial application standards
Applications
- Hard-switching PWM stages and resonant-switching PWM stages, e.g. for PC power supplies, adapters, LCD and plasma TVs, and lighting equipment.
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 23pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 328pF | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Output Capacitance(Coss) | 23pF | |
| Current - Continuous Drain(Id) | 4.5A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 328pF | |
| Pd - Power Dissipation | 37W | |
| RDS(on) | 950mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 15.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS C6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The resulting devices deliver all the advantages of fast-switching SJ MOSFETs without compromising ease of use. Ultra-low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally superior.
Features
- Extremely low losses due to ultra-low figure of merit Rdson×Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Compliant with JEDEC (J-STD20 and JESD22) industrial application standards
Applications
- Hard-switching PWM stages and resonant-switching PWM stages, e.g. for PC power supplies, adapters, LCD and plasma TVs, and lighting equipment.
C536856 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

