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Infineon IPD60R280PFD7S

Manufacturer
Infineon
MPN
IPD60R280PFD7S
LCSC Part #
C536815
Packaging
TO-252-3
Customer #
Key Attributes
51W 650V 7A 280mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS
DatasheetInfineon IPD60R280PFD7S
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252-3
Output Capacitance(Coss)15pF
Ciss-Input Capacitance656pF
Pd - Power Dissipation51W
Configuration-
Operating Temperature-40℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Reverse Transfer Capacitance (Crss)15pF
RDS(on)280mΩ@10V
Number1 N-channel
Gate Charge(Qg)15.3nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS PFD7 is an optimized platform tailored for cost-sensitive applications in the consumer market, such as chargers, adapters, motor drives, and lighting. This new series combines all the advantages of fast-switching SJ MOSFETs with an excellent price-to-performance ratio and advanced ease of use. The technology meets the highest efficiency standards and supports high power density, enabling customers to achieve ultra-slim designs.

Features

AI Translation
  • Extremely low losses due to ultra-low figures of merit RDS(on) * Qg and RDS(on) * Eoss
  • Low switching loss Eoss with excellent thermal performance
  • Fast body diode
  • Wide RDS(on) range with multiple package options
  • Integrated Zener diode

Applications

AI Translation
  • Zero Voltage Switching (ZVS) topology for high-density chargers
  • Adapters
  • Lighting
  • Motor drive applications