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Infineon IPD048N06L3 G

Manufacturer
MPN
IPD048N06L3 G
LCSC Part #
C536716
Packaging
TO-252
Customer #
Key Attributes
Power-Transistor
DatasheetInfineon IPD048N06L3 G
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 158
158 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.393$ 1.39
10+$ 1.1865$ 11.87
30+$ 1.0735$ 32.21
100+$ 0.944$ 94.40
500+$ 0.8883$ 444.15
1,000+$ 0.8621$ 862.10
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252
Output Capacitance(Coss)1.1nF
Pd - Power Dissipation115W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)90A
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.3nF
Gate Charge(Qg)37nC@4.5V
Vgs±20V
TypeN-Channel

Features

AI Translation
  • Suited for high-frequency switching and synchronous rectification
  • Technology optimized for DC/DC converters
  • Excellent gate charge × RDS(on) product (figure of merit)
  • Ultra-low on-resistance RDS(on)
  • N-channel, logic level
  • 100% avalanche tested
  • Lead-free plating; RoHS compliant
  • JEDEC qualified for target applications

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