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Infineon IPA60R160P7
| Manufacturer | |
| MPN | IPA60R160P7 |
| LCSC Part # | C536355 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | 26W 650V 13A 160mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPA60R160P7 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 1.317nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 13A | |
| Reverse Transfer Capacitance (Crss) | 454pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 1.317nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 13A | |
| Reverse Transfer Capacitance (Crss) | 454pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with excellent ease of use, such as extremely low ringing tendency, superior body diode robustness during hard commutation, and outstanding ESD capability. Furthermore, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Features
- Excellent commutation robustness for both hard-switching and soft-switching (PFC and LLC)
- Significantly reduced switching and conduction losses
- Outstanding ESD robustness across all products, >2kV (HBM)
- Low RDS(on)A (<1Ωmm²) delivers superior RDS(on)-to-package ratio vs. competition
Applications
- PFC stage circuits - Hard-switched PWM stage circuits - Resonant switching stage circuits, e.g. for PC power supplies, adapters, LCD and PDP TVs, lighting, servers, telecom and UPS
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.0543 | $ 3.05 |
| 10+ | $ 2.6872 | $ 26.87 |
| 50+ | $ 2.4581 | $ 122.91 |
| 100+ | $ 2.2225 | $ 222.25 |
| 500+ | $ 2.1153 | $ 1057.65 |
| 1,000+ | $ 2.0698 | $ 2069.80 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 1.317nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 13A | |
| Reverse Transfer Capacitance (Crss) | 454pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Output Capacitance(Coss) | 23pF | |
| Ciss-Input Capacitance | 1.317nF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 13A | |
| Reverse Transfer Capacitance (Crss) | 454pF | |
| RDS(on) | 160mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Introduction
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with excellent ease of use, such as extremely low ringing tendency, superior body diode robustness during hard commutation, and outstanding ESD capability. Furthermore, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Features
- Excellent commutation robustness for both hard-switching and soft-switching (PFC and LLC)
- Significantly reduced switching and conduction losses
- Outstanding ESD robustness across all products, >2kV (HBM)
- Low RDS(on)A (<1Ωmm²) delivers superior RDS(on)-to-package ratio vs. competition
Applications
- PFC stage circuits - Hard-switched PWM stage circuits - Resonant switching stage circuits, e.g. for PC power supplies, adapters, LCD and PDP TVs, lighting, servers, telecom and UPS
C536355 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| CMF65R160SD | Cmos | Similar | TO-220F | 76 | $1.2113 $1.275 | ||
| NCE65N180 | NCE | Similar | TO-220 | 87 | $ 1.8957 | ||
| IPP80R280P7 | Infineon | Similar | TO-220-3 | 1 | $ 3.2249 | ||
| NCE65TF180 | NCE | Similar | TO-220 | 36 | $ 2.4191 | ||
| IPA60R060P7 | Infineon | Similar | TO-220-3 | 3 | $ 5.6651 |