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Infineon IHW40N120R5
| Manufacturer | |
| MPN | IHW40N120R5 |
| LCSC Part # | C536127 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | IGBT 1.2kV 80A TO-247-3 |
| Datasheet | Infineon IHW40N120R5 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 420ns | |
| Pd - Power Dissipation | 394W | |
| Td(on) | - | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.85V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.37nF | |
| Gate Charge(Qg) | 310nC@15V | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 420ns | |
| Pd - Power Dissipation | 394W | |
| Td(on) | - | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.85V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.37nF | |
| Gate Charge(Qg) | 310nC@15V | |
| Output Capacitance(Coes) | 70pF |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Powerful monolithic body diode with low forward voltage designed for soft commutation
- TRENCHSTOPTM technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
- Low EMI
- Qualified according to JESD - 022 for target applications
- Pb - free lead plating; RoHS compliant
- Halogen free (according to IEC 61249 - 2 - 21)
Applications
AI Translation
- Induction cooking
- Microwave ovens
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 420ns | |
| Pd - Power Dissipation | 394W | |
| Td(on) | - | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.85V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.37nF | |
| Gate Charge(Qg) | 310nC@15V | |
| Output Capacitance(Coes) | 70pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Td(off) | 420ns | |
| Pd - Power Dissipation | 394W | |
| Td(on) | - | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 60pF | |
| IGBT Type | - |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.1V@1mA | |
| Operating Temperature | -40℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 1.85V@40A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.6mJ | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | 2.37nF | |
| Gate Charge(Qg) | 310nC@15V | |
| Output Capacitance(Coes) | 70pF |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Powerful monolithic body diode with low forward voltage designed for soft commutation
- TRENCHSTOPTM technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
- Low EMI
- Qualified according to JESD - 022 for target applications
- Pb - free lead plating; RoHS compliant
- Halogen free (according to IEC 61249 - 2 - 21)
Applications
AI Translation
- Induction cooking
- Microwave ovens
C536127 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |