15% OFF
- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
VBsemi Elec NTJD4401NT1G-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | NTJD4401NT1G-VB |
| LCSC Part # | C5355772 |
| Packaging | SOT-363(SC-70) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 20V 2.6A SOT-363(SC-70) |
| Datasheet | VBsemi Elec NTJD4401NT1G-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-363(SC-70) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.6A | |
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 86mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-363(SC-70) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.6A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 86mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Applications
AI Translation
- Load switch for portable applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-363(SC-70) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.6A | |
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 86mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-363(SC-70) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.6A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 86mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@8V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- Compliant with RoHS Directive 2002/95/EC
Applications
AI Translation
- Load switch for portable applications
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |