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AGMSEMI AGM30P55A
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM30P55A |
| LCSC Part # | C5349208 |
| Packaging | PDFN-8(5x6) |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 65A PDFN-8(5x6) |
| Datasheet | AGMSEMI AGM30P55A |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 6mΩ@10V;10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 6mΩ@10V;10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM30P55A combines advanced trench MOSFET technology with low-resistance packaging to achieve ultra-low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Secondary-side synchronous rectification SMPS
- Point-of-load applications
- Brushless DC motor driver
In-Stock: 365
365 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3257$ 0.3095 | $ 1.55 |
| 50+ | $ 0.2683$ 0.2549 | $ 12.75 |
| 150+ | $ 0.2437$ 0.2316 | $ 34.74 |
| 500+ | $ 0.213$ 0.2024 | $ 101.20 |
| 3,000+ | $ 0.1652$ 0.1570 | $ 471.00 |
| 6,000+ | $ 0.157$ 0.1492 | $ 895.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 6mΩ@10V;10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN-8(5x6) | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 460pF | |
| Current - Continuous Drain(Id) | 65A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF | |
| RDS(on) | 6mΩ@10V;10mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM30P55A combines advanced trench MOSFET technology with low-resistance packaging to achieve ultra-low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R<sub>DS(ON)</sub> for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Secondary-side synchronous rectification SMPS
- Point-of-load applications
- Brushless DC motor driver
C5349208 EasyEDA Library
Not drawn yet
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AGM30P05A | AGMSEMI | PDFN5x6-8L | 2,205 | $ 0.2912 | ||
| AGM40P75A | AGMSEMI | PDFN5x6-8L | 942 | $ 0.4507 | ||
| AGM30P08A | AGMSEMI | PDFN5x6-8L | 95 | $ 0.2797 | ||
| AGM30P100A | AGMSEMI | PDFN5x6-8L | 206 | $ 0.5761 | ||
| AGM60P90A | AGMSEMI | PDFN-8(5x6) | 2,854 | $ 0.4438 | ||
| AGM30P110A | AGMSEMI | PDFN-8(5x6) | 434 | $0.5869 $0.6379 | ||
| AGM60P100A | AGMSEMI | PDFN-8(5x6) | 2 | $ 0.8169 | ||
| AGMH022P10A | AGMSEMI | PDFN5x6-8 | 5 | $ 1.0837 | ||
| AGM40P100A | AGMSEMI | PDFN5x6-8L | 0 | $ 0.6965 | ||
| AGM40P35A-KU | AGMSEMI | PDFN5x6-8 | 0 | $ 0.2607 |