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AGMSEMI AGM303D1

Manufacturer
AGMSEMIAsian Brands
MPN
AGM303D1
LCSC Part #
C5349135
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 30V 100A TO-252
DatasheetAGMSEMI AGM303D1
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAGMSEMI
PackagingTO-252
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)100A
Ciss-Input Capacitance2.5nF
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss)350pF
RDS(on)2mΩ@10V;3.1mΩ@4.5V
Number1 N-channel
Gate Charge(Qg)49nC@10V
Gate Threshold Voltage (Vgs(th))1.5V
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Introduction

AI Translation

AGM303D1 combines advanced trench MOSFET technology with a low-resistance package to achieve an extremely low on-resistance RDS(ON). The device is ideally suited for load switch and battery protection applications.

Features

AI Translation
  • Advanced high cell density trench technology
  • Low on-resistance RDS(ON) for minimized conduction losses
  • Low gate charge for fast switching
  • Low thermal resistance
  • 100% avalanche tested
  • 100% Dynamic Voltage and Dynamic Stress (DVDS) tested

Applications

AI Translation
  • Motherboard/GPU core voltage
  • Synchronous rectifier for switch-mode power supply secondary side
  • Point-of-load (POL) applications
  • Brushless DC (BLDC) motor driver