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AGMSEMI AGM303D1
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM303D1 |
| LCSC Part # | C5349135 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 100A TO-252 |
| Datasheet | AGMSEMI AGM303D1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 385pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 2mΩ@10V;3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 49nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 385pF | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 2mΩ@10V;3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 49nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM303D1 combines advanced trench MOSFET technology with a low-resistance package to achieve an extremely low on-resistance RDS(ON). The device is ideally suited for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low on-resistance RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% Dynamic Voltage and Dynamic Stress (DVDS) tested
Applications
AI Translation
- Motherboard/GPU core voltage
- Synchronous rectifier for switch-mode power supply secondary side
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.232 | $ 1.16 |
| 50+ | $ 0.1845 | $ 9.23 |
| 150+ | $ 0.1641 | $ 24.62 |
| 500+ | $ 0.1387 | $ 69.35 |
| 2,500+ | $ 0.1246 | $ 311.50 |
| 5,000+ | $ 0.1178 | $ 589.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 385pF | |
| Current - Continuous Drain(Id) | 100A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 2mΩ@10V;3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 49nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 385pF | |
| Current - Continuous Drain(Id) | 100A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 75W | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 2mΩ@10V;3.1mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 49nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM303D1 combines advanced trench MOSFET technology with a low-resistance package to achieve an extremely low on-resistance RDS(ON). The device is ideally suited for load switch and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low on-resistance RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% Dynamic Voltage and Dynamic Stress (DVDS) tested
Applications
AI Translation
- Motherboard/GPU core voltage
- Synchronous rectifier for switch-mode power supply secondary side
- Point-of-load (POL) applications
- Brushless DC (BLDC) motor driver
C5349135 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AGM303D | AGMSEMI | TO-252 | 365 | $0.2480 $0.261 | ||
| AGM4025D | AGMSEMI | TO-252 | 130 | $0.3844 $0.4178 | ||
| AGM304D | AGMSEMI | TO-252 | 20 | $ 0.1695 | ||
| AGM403D1 | AGMSEMI | TO-252 | 260 | $0.3491 $0.3674 | ||
| AGM3015D | AGMSEMI | TO-252 | 60 | $ 0.3515 | ||
| AGM042N10D | AGMSEMI | TO-252 | 5,122 | $0.6804 $0.7162 | ||
| AGM302D1 | AGMSEMI | TO-252 | 0 | $ 0.3527 | ||
| AGM403D1-M1 | AGMSEMI | TO-252 | 0 | $ 0.383 | ||
| AGM12T05D | AGMSEMI | TO-252 | 0 | $ 1.0073 | ||
| AGMH6035D | AGMSEMI | TO-252 | 0 | $ 0.5767 |