AGMSEMI AGM1810S
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM1810S |
| LCSC Part # | C5349121 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 16A SOP-8 |
| Datasheet | AGMSEMI AGM1810S |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOP-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.398nF | |
| Gate Charge(Qg) | 26nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOP-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 16A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.398nF | |
| Gate Charge(Qg) | 26nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM1810S combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is ideally suited for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS Secondary Synchronous Rectifier
- Point-of-Load (POL) Applications
- Brushless DC (BLDC) Motor Driver
In-Stock: 170
170 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3812$ 0.3507 | $ 1.75 |
| 50+ | $ 0.3001$ 0.2761 | $ 13.81 |
| 150+ | $ 0.2644$ 0.2433 | $ 36.50 |
| 500+ | $ 0.2206$ 0.2030 | $ 101.50 |
| 3,000+ | $ 0.2011$ 0.1851 | $ 555.30 |
| 6,000+ | $ 0.1898$ 0.1747 | $ 1048.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOP-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 16A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.398nF | |
| Gate Charge(Qg) | 26nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOP-8 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 205pF | |
| Current - Continuous Drain(Id) | 16A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 8.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.398nF | |
| Gate Charge(Qg) | 26nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM1810S combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). The device is ideally suited for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) to minimize conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- SMPS Secondary Synchronous Rectifier
- Point-of-Load (POL) Applications
- Brushless DC (BLDC) Motor Driver
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



