DOINGTER PH300PG-B
| Manufacturer | DOINGTERAsian Brands |
| MPN | PH300PG-B |
| LCSC Part # | C53373882 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 100V 10A 2.5V 46W 240mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs |
| Datasheet | DOINGTER PH300PG-B |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 240mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 46W | |
| RDS(on) | 240mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (Rds(on)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Vds = -100V, Id = -10A, Rds(on) < 300mΩ (at Vgs = -10V)
- Low gate charge
- Eco-friendly device options available
- Advanced high cell-density trench technology for ultra-low Rds(on)
- Excellent package with good thermal dissipation performance
In-Stock: 190
190 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2628 | $ 1.31 |
| 50+ | $ 0.2075 | $ 10.38 |
| 150+ | $ 0.1837 | $ 27.56 |
| 500+ | $ 0.1542 | $ 77.10 |
| 2,000+ | $ 0.141 | $ 282.00 |
| 5,000+ | $ 0.1331 | $ 665.50 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 240mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 46W | |
| RDS(on) | 240mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (Rds(on)) and low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Vds = -100V, Id = -10A, Rds(on) < 300mΩ (at Vgs = -10V)
- Low gate charge
- Eco-friendly device options available
- Advanced high cell-density trench technology for ultra-low Rds(on)
- Excellent package with good thermal dissipation performance
C53373882 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



