- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
DOINGTER PC003NG-E
| Manufacturer | DOINGTERAsian Brands |
| MPN | PC003NG-E |
| LCSC Part # | C53373816 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 30V 150A 1.6V 109W 2.9mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs |
| Datasheet | DOINGTER PC003NG-E |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 499pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 109W | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 2.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.498nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 499pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 109W | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 2.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.498nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 30V, ID = 150A, RDS(ON) < 3mΩ, @ VGS = 10V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low on-resistance
- Excellent package for superior thermal dissipation
In-Stock: 200
200 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.336 | $ 1.68 |
| 50+ | $ 0.2663 | $ 13.32 |
| 150+ | $ 0.2365 | $ 35.48 |
| 500+ | $ 0.1993 | $ 99.65 |
| 2,000+ | $ 0.1827 | $ 365.40 |
| 5,000+ | $ 0.1727 | $ 863.50 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 499pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 109W | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 2.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.498nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-220 | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 499pF | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 109W | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 2.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.498nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 30V, ID = 150A, RDS(ON) < 3mΩ, @ VGS = 10V
- Low gate charge
- Eco-friendly devices available
- Advanced high cell density trench technology for ultra-low on-resistance
- Excellent package for superior thermal dissipation
C53373816 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DOP150N03 | DOINGTER | TO-220 | 1,355 | $ 0.2248 | ||
| PC2R4NG | DOINGTER | TO-220 | 100 | $ 0.3687 | ||
| DOP160N10T | DOINGTER | TO-220 | 488 | $ 0.5704 |